SGS Thomson Microelectronics STPS15H100CB Datasheet
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 175 °C
V
(max) 0.67 V
F
2 x 7.5 A
100 V
STPS15H100CB
A1
K
A2
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
■
LOW LEAKAGE CURRENT
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
CURRENT AND FORWARD VOLTAGE DROP
■ LOW THERMAL RESISTANCE
■ AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
K
A2
A1
DPAK
Dual center tab Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Package in DPAK, this device is intended for use
in high frequency inverters.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 135°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Peak repetitive reverse current tp=2µs square F=1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
δ = 0.5
Per diode
Per device
100 V
10 A
7.5
15
75 A
1A
6600 W
-65 to+175 °C
175 °C
10000 V/µs
A
dPtot
*:
<
dTj Rth j a
July 2003 - Ed : 2A
thermal runaway condition for a diode on its own heatsink
−1()
1/4
STPS15H100CB
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
Reverse leakage current Tj = 25°C V
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Pulse test : * tp = 380 µs, δ <2%
Per diode
th(c)
R=VRRM
= 7.5 A
F
= 7.5 A
F
=12A
F
=12A
F
=15A
F
=15A
F
Total
4
°C/W
2.4
0.7
3mA
1.3 4 mA
0.8 V
0.62 0.67
0.85
0.68 0.73
0.89
0.71 0.76
To evaluate the conduction losses use the following equation :
P=0.58xI
Fig.1:Conductionlossesversus average current.
F(AV)
+ 0.012 I
F2(RMS)
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
PF(av)(W)
7
6
5
4
3
2
1
0
0123456789
δ = 0.05
δ = 0.2
δ = 0.1
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
9
8
7
6
5
4
3
2
1
=tp/T
δ
0
0 25 50 75 100 125 150 175
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=70°C/W
T
tp
Tamb(°C)
T (°C)
j
2/4
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