SGS Thomson Microelectronics STPS1545CG, STPS1545CT, STPS1545CF Datasheet
MAINPRODUCTCHARACTERISTICS
STPS1545CT/CF/CG
POWER SCHOTTKY RECTIFIER
I
F(AV)
V
RRM
2 x 7.5 A
45 V
Tj (max) 175 °C
(max) 0.57V
V
F
FEATURESAND BENEFITS
VERYSMALLCONDUCTION LOSSES
NEGLIGIBLESWITCHINGLOSSES
EXTREMELYFAST SWITCHING
INSULATEDPACKAGE:ISOWATT220AB
Insulatingvoltage= 2000VDC
Capacitance= 12pF
DESCRIPTION
DualcentertapSchottkyrectifiersuited forSwitchModePowerSupplyandhighfrequencyDC to DC
converters.
Packaged either in TO-220AB, ISOWATT220AB
2
PAK, this device is especially intended for
or D
use in low voltage, high frequency inverters, free
wheelingand polarityprotectionapplications.
ABSOLUTE RATINGS(limitingvalues, per diode)
K
TO-220AB
STPS1545CT
A1
A2
K
A1
K
D
STPS1545CG
A2
ISOWATT220AB
STPS1545CF
A2
A1
2
PAK
K
A2
K
A1
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitivepeak reversevoltage 45 V
RMSforward current 20 A
Averageforwardcurrent
δ =0.5
TO-220AB/
2
D
PAK
Tc = 157°C Per diode 7.5 A
ISOWATT220AB Tc = 130°C Per device 15
I
FSM
Surgenon repetitive forwardcurrent tp = 10 ms
150 A
Sinusoidal
I
RRM
Repetitivepeak reversecurrent tp = 2µs square
1A
F = 1kHz
I
RSM
Nonrepetitivepeak reversecurrent
tp = 100µs square
2A
Tstg Storagetemperaturerange -65 to +175 °C
Tj Maximumoperatingjunction temperature* 175 °C
dV/dt Criticalrateof rise of reversevoltage 10000 V/µs
<
1
Rth(j−a
thermal runawayconditionfor a diode on its own heatsink
)
dPtot
*:
dTj
June 1999 - Ed: 4B
1/7
STPS1545CT/CF/CG
THERMALRESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case TO-220AB/ D2PAK Per diode
Total
ISOWATT220AB Per diode
Total
TO-220AB/ D2PAK Coupling 0.35
3.0
1.7
5.5
4.2
ISOWATT220AB 2.9
Whenthe diodes1 and 2 are used simultaneously:
∆ Tj (diode1) = P (diode1)x R
STATICELECTRICALCHARACTERISTICS
(perdiode) + P (diode2) x R
th(j-c)
(Perdiode)
th(c)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
* Reverseleakage current Tj = 25°CV
R
R=VRRM
100
Tj = 125°C 5 15 mA
* Forwardvoltage drop Tj = 125°CI
V
F
Tj = 25°CI
Tj = 125°CI
= 7.5A 0.5 0.57 V
F
= 15A 0.84
F
= 15A 0.65 0.72
F
°
C/W
µ
A
Pulse test: * tp = 380µs, δ<2%
Toevaluate the conductionlossesusethe followingequation :
P = 0.42x I
F(AV)
+0.020I
F2(RMS)
2/7
STPS1545CT/CF/CG
Fig. 1:
Average forward power dissipation versus
averageforwardcurrent(per diode).
PF(av)(W)
6
5
δ = 0.05
4
3
2
1
0
012345678910
Fig.3-1:
Nonrepetitivesurgepeak forwardcurrent
versus overload duration (maximum values, per
diode)(TO-220ABandD
IM(A)
120
100
80
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
δ = 0.2δ = 0.1
IF(av)(A)
2
PAK).
t(s)
δ= 0.5
δ
=tp/T
δ =1
T
tp
Tc=50°C
Tc=100°C
Tc=150°C
Fig. 2:
Average current versus ambient
temperature (δ= 0.5, per diod e).
IF(av)(A)
9
8
7
6
5
Rth(j-a)=40°C/W
Rth(j-a)=Rth(j-c)
ISOWATT220AC
Rth(j-a)=15°C/W
TO-220AC
D PAK
4
3
2
1
0
0 25 50 75 100 125 150 175
Fig.3-2:
T
δ
=tp/T
tp
Tamb(°C)
Nonrepetitivesurgepeak forwardcurrent
versus overload duration (maximum values, per
diode)(ISOWATT220AB).
IM(A)
80
70
60
50
40
30
20
IM
10
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=50°C
Tc=100°C
Tc=150°C
Fig. 4-1:
impedancejunction to case versus pulse duration
(perdiode) (TO-220ABand D
Relative variation of thermal transient
2
PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 4-2:
Relative variation of thermal transient
impedancejunction to case versus pulse duration
(per diode)(ISOWATT220AB).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
0.2
δ = 0.1
0.0
1E-3 1E-2 1E-1 1E+0 1E+1
Single pulse
tp(s)
T
=tp/T tp
δ
3/7
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