SGS Thomson Microelectronics STPS120L15TV Datasheet
LOW DROP OR-ing POWER SCHOTTKYDIODE
MAINPRODUCT CHARACTERISTICS
STPS120L15TV
I
F(AV)
V
RRM
2 x 60 A
15 V
K2 A2
Tj (max) 125 °C
(max) 0.31V
V
F
A1K1
FEATURESAND BENEFITS
VERY LOW DROPFORWARD VOLTAGE FOR
K2
LESS POWER DISSIPATION AND REDUCED
HEATSINK
A2
INSULATEDPACKAGE:
Insulatedvoltage = 2500V
Capacitance= 45 pF
DESCRIPTION
(RMS)
K1
A1
Dual Schottky rectifier suited for Switched Mode
PowerSupplies andDCtoDC powerconverters.
TM
Packaged in ISOTOP
, this device is especially
ISOTOP
TM
intended for use as an OR-ing diode in fault tolerant powersupplyequipments.
ABSOLUTE RATINGS
(limitingvalues,per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitivepeakreversevoltage 15 V
RMSforwardcurrent 160 A
Averageforwardcurrent Tc = 115°C
δ
=1
Surgenon repetitiveforward current tp = 10 ms
60 A
1200 A
Sinusoidal
I
RRM
Repetitivepeakreversecurrent tp = 2 µs
2A
F = 1kHz
T
Storagetemperaturerange - 65 to + 150
stg
Tj Maximumoperatingjunction temperature 125
dV/dt Critical rate of rise of reversevoltage 10000 V/µs
<
Rth(j−a
1
thermal runawayconditionfor a diodeon its own heatsink
)
dPtot
*:
dTj
ISOTOP is a trademark ofSTMicroelectronics
July 1999- Ed: 4A
°
C
°
C
1/4
STPS120L15TV
THERMALRESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case Perdiode 0.45 °C/W
Total 0.28
Coupling 0.1
STATICELECTRICALCHARACTERISTICS
(perdiode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
* Reverseleakagecurrent Tj = 100°CV
R
Tj = 25°CV
= 5V 450 mA
R
= 12V 22 mA
R
Tj = 100°C 0.7 2.2 A
V
* Forwardvoltage drop Tj =25°CI
F
Tj = 125°CI
Pulse test : * tp = 380µs,δ<2%
To evaluate theconduction lossesuse the following equation :
P = 0.18 x I
+ 2.2 10-3xI
F(AV)
F2(RMS)
= 60A 0.43 V
F
= 60A 0.27 0.31
F
Fig. 1:
Averageforward powerdissipationversus
averageforward current(per diode).
PF(av)(W)
20
18
16
14
12
10
8
6
4
2
0
δ= 0.05
0 10203040506070
2/4
δ = 0.1
δ = 0.2 δ = 0.5
IF(av)(A)
δ =1
=tp/T
δ
T
tp
Fig. 2:
temperature(
70
60
50
40
30
20
10
0
Average forward current versus ambient
δ =1)(per diode).
IF(av)(A)
Rth(j-a)=Rth(j-c)
Rth(j-a)=2.5°C/W
T
=tp/T
δ
0 25 50 75 100 125
tp
Tamb(°C)
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