SGS Thomson Microelectronics STPS10L60FP Datasheet
®
MAIN PRODUCT CHARACTERISTICS
STPS10L60D/FP
POWER SCHOTTKY RECTIFIER
I
F(AV)
V
RRM
10 A
60 V
Tj (max) 150°C
(max) 0.56 V
V
F
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP
■
NEGLIGIBLE SWITCHING LOSSES
■
LOW THERMAL RESISTANCE
■
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Schottky rectifier suited for Switched Mode Power
SuppliesandhighfrequencyDCtoDCconverters.
Packaged in TO-220AC,TO-220FPAC this device
is intended for use in DC/DC chargers.
ABSOLUTE RATINGS (limiting values)
A
K
TO-220FPAC
STPS10L60FP
A
K
TO-220AC
STPS10L60D
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward current TO-220AC Tc = 140°C δ = 0.5
60 V
30 A
10 A
TO-220FPAC Tc = 120°C δ = 0.5
I
FSM
I
RRM
P
ARM
T
Tj
dV/dt
dPtot
*:
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp=2µssquare F=1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
stg
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTj Rth j a
July 2003 - Ed: 4B
thermal runaway condition for a diode on its own heatsink
−1()
220 A
1A
5800 W
-65 to+175 °C
150 °C
10000 V/µs
1/5
STPS10L60D/FP
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case TO-220AC
TO-220FPAC
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
*
R
Reverse leakage current Tj = 25°C VR=V
RRM
Tj = 125°C
*
V
F
Forward voltage drop Tj = 25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
=10A
F
=10A
F
=20A
F
=20A
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.42xI
F(AV)
+ 0.014 I
F2(RMS)
1.6 °C/W
4
350 µA
65 95 mA
0.6 V
0.48 0.56
0.74
0.62 0.7
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
8
7
6
5
4
3
2
1
0
0123456789101112
δ = 0.05
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
IF(av)(A)
12
Rth(j-a)=Rth(j-c)
TO-220AC
10
8
6
4
T
Rth(j-a)=15°C/W
TO-220FPAC
2
=tp/T
δ
0
0 25 50 75 100 125 150
tp
Tamb(°C)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
2/5
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