SGS Thomson Microelectronics STPS10L60D Datasheet
®
MAIN PRODUCT CHARACTERISTI CS
STPS10L60D
POWER SCHOTTKY RECTIFIER
I
F(AV)
V
RRM
10 A
60 V
Tj (max) 150°C
V
(max) 0.56 V
F
FEATURES AND BENE FITS
LOW FORWARD V O LTAGE DROP
NEGLIGIBLE SWITCHING LOSSE S
LOW THERMAL RE SISTA NCE
DESCR IPT ION
Schottky rectifier suited for Switched Mode Power
Supplies and high frequency DC t o DC c onverters.
Packaged in TO220-AC, this device is intended for
use in DC/DC chargers.
ABSOLUTE RATINGS (limiting values)
A
K
TO220-AC
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
Tj
dV/dt
dPtot
* :
July 1999 - Ed: 1A
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 140°C δ = 0.5
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp=2 µs square F=1kHz
stg
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTj
Rth(j−a
1
thermal runaway condition for a diode on its own heatsink
)
60 V
30 A
10 A
220 A
1A
- 65 to + 175 °C
150 °C
10000 V/µs
1/4
STPS10L60D
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
*
R
Reverse leakage current Tj = 25°CV
= V
R
RRM
Tj = 125°C
*
V
F
Forward voltage drop Tj = 25°CI
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
= 10 A
F
= 10 A
F
= 20 A
F
= 20 A
F
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.014 I
F2(RMS)
1.6 °C/W
350 µA
65 95 mA
0.6 V
0.48 0.56
0.74
0.62 0.7
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
8
7
6
5
4
3
2
1
0
0123456789101112
δ = 0.05
δ = 0.1
IF(av) (A)
δ = 0.2
2/4
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
IF(av)(A)
12
10
8
6
4
2
0
0 25 50 75 100 125 150
δ
T
=tp/T
Rth(j-a)=15°C/W
tp
Rth(j-a)=Rth(j-c)
Tamb(°C)