SGS Thomson Microelectronics STPS10L60CF Datasheet
®
STPS10L60CF
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
RRM
2 x 5 A
60 V
Tj (max) 150 °C
(max) 0.52 V
V
F
FEATURES AND BENEFITS
LOW FORWARD VOLTA GE DROP
NEGLIGIBLE SW ITCHING LOS S ES
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in ISOWATT220AB, this device is
intended for use in high frequency inverters.
A1
K
A2
K
A1
ISOWATT220AB
A2
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
stg
Tj
dV/dt
dPtot
* :
dTj
July 1999 - Ed: 2A
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 130°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp = 2 µs square F = 1kHz
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
<
Rth(j−a
Per diode
δ = 0.5
1
thermal runaway condition for a diode on its own heatsink
)
Per device
60 V
30 A
5
10
180 A
1A
- 65 to + 175 °C
150 °C
10000 V/µs
A
1/4
STPS10L60CF
THERMA L RE SISTA NC E
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case
Per diode
Total
Coupling 2.5 °C/W
4.5
3.5
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
°C/W
*
I
R
Reverse leakage current Tj = 25°CV
= V
R
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
= 5 A
F
= 5 A
F
= 10 A
F
= 10 A
F
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.4x I
Fig. 1: Average forward power dis sipation versus
average forward current (per diode).
PF(av)(W)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
F(AV)
δ = 0.05
+ 0.024 I
F2(RMS)
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
Fig. 2: Average current versus ambient
temperature (δ=0.5) (per diode).
IF(av)(A)
6
5
4
3
2
1
tp
=tp/T
δ
0
0 25 50 75 100 125 150
RRM
T
220 µA
45 60 mA
0.55 V
0.43 0.52
0.67
0.55 0.64
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
tp
Tamb(°C)
2/4
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