SGS Thomson Microelectronics STPS10L45CT, STPS10L45CF, STPS10L45CFP Datasheet

®

STPS10L45CT/CG/CF/CFP

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

2x5 A

45 V

Tj (max) 150°C

V

(max) 0.46 V

F

FEATURES AND BENEFITS

LOW FORWARD VOLTAGE DROP MEANING

■

VERY SMALL CONDUCTION LOSSES LOW SWITCHING LOSSES ALLOWING HIGH

■

FREQUENCY OPERATION INSULATED PACKAGE: ISOWATT220AB,

■

TO-220FPAB Insulating voltage = 2000V DC

TO-220FPAB

STPS10L45CFP

Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED

■

DESCRIPTION

Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters.

Packaged in TO-220AB, ISOWATT220AB, TO-220FPAB and D

2

PAK, these devices are

intended for use in low voltage, high frequency

TO-220AB

STPS10L45CT

inverters, free-wheeling and polarity protection applications.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

stg

Tj

dV/dt

dPtot

*:

dTj Rth j a

July 2003 - Ed: 3B

Repetitive peak reverse voltage RMS forward current Average

forward current

TO-220AB D2PAK

ISOWATT220AB TO-220FPAB

Tc =135°C δ = 0.5

Tc =115°C

δ = 0.5 Surge non repetitive forward current tp = 10 ms Sinusoidal Repetitive peak reverse current tp=2µssquare F=1kHz Non repetitive peak reverse current tp = 100 µs square Repetitive peak avalanche power tp = 1µs Tj = 25°C Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage

<

thermal runaway condition for a diode on its own heatsink

−1()

A1

A2

K

A1

A2

K

A1

Per diode Per device

K

A2

A1

2

PAK

D

STPS10L45CG

A1

ISOWATT220AB

STPS10L45CF

45 V 20 A

5

10

5

10

150 A

1A 2A

2700 W

- 65 to + 150 °C 150 °C

10000 V/µs

A2

K

A

1/7

STPS10L45CT/CG/CF/CFP

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

th (c)

th (j-c)

th (c)

Junction to case TO-220AB

D2PAK

Junction to case

ISOWATT220AB TO-220FPAB

Per diode

Total

3

1.7

Coupling 0.35

Per diode

Total

5

3.8

Coupling 2.5

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x R

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

*

I

R

V

F

Reverse leakage current

*

Forward voltage drop Tj = 25°CI

Tj = 25°C V Tj = 125°C

Tj = 125°C I Tj=25°CI Tj = 125°C I

R=VRRM

=5A

F

=5A

F

=10A

F

=10A

F

45 90 mA

0.36 0.46

0.49 0.59

0.15 mA

0.53 V

0.67

°C/W

Pulse test : * tp = 380 µs, δ <2%

To evaluate the conduction losses use the following equation : P=0.33xI

Fig. 1: Average forward power dissipation versus average forward current (per diode).

PF(av)(W)

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

F(AV)

δ = 0.05

+ 0.026 I

δ = 0.1

IF(av) (A)

F2(RMS)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode).

IF(av)(A)

6 5 4 3 2

tp

1

=tp/T

δ

0

0 25 50 75 100 125 150

Rth(j-a)=Rth(j-c)

TO-220AB/D²PAK

TO-220FPAB ISOWATT220AB

T

tp

Tamb(°C)

Rth(j-a)=15°C/W

2/7

STPS10L45CT/CG/CF/CFP

Fig. 3: Normalized avalanche power derating

versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB and D

IM(A)

100

90 80 70 60 50 40 30

IM

20 10

0 1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

2

PAK).

Tc=25°C Tc=75°C

Tc=125°C

Fig. 4: Normalized avalanche power derating versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2 1

0.8

0.6

0.4

0.2 0

0 25 50 75 100 125 150

T (°C)

j

Fig. 5-2: Non repetitive surge peak forward

current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB).

IM(A)

80 70 60 50 40 30 20

IM

10

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration. (TO-220AB and D

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

δ = 0.2

0.4

δ = 0.1

0.2

0.0 1E-3 1E-2 1E-1 1E+0

Single pulse

2

PAK).

tp(s)

δ

=tp/T

T

tp

Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration. (ISOWATT220AB, TO-220FPAB).

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

0.4

δ = 0.2

δ = 0.1

0.2

0.0 1E-3 1E-2 1E-1 1E+0 1E+1

Single pulse

tp(s)

δ

=tp/T

T

tp

3/7