SGS Thomson Microelectronics STPS10H100CT, STPS10H100CG-1, STPS10H100CG-TR, STPS10H100CG Datasheet
®
STPS 10H1 00CT /CG/CG -1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTIC S
I
F(AV)
V
RRM
2 x 5 A
100 V
Tj 175° C
(max) 0.61 V
V
F
FEATURES AND BENEFITS
HIGH JUNCTION TEMPERATURE CAPABILITY
FOR CONVERTERS LOCATED IN CONFINED
ENVIRONMENT.
LOW LEAKAGE CURRENT AT HIGH
TEMPERATURE.
LOW STATIC AND DYNAMIC LOSSES AS A
RESULT OF THE SCHOTTKY BARRIER.
DESCR IPT ION
Schottky barrier rectifier designed for high
frequency miniature Switched Mode Power
Supplies such as adaptators and on board
DC/DC converters. Packaged in TO220AB,
2
PAK and I2PAK.
D
A1
A2
K
A2
A1
D2PAK
STPS10H100CG
K
TO-220AB
STPS10H100CT
K
K
K
A1
I2PAK
STPS10H100CG-1
A2
K
A1
A2
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
Repetitive peak reverse voltage 100 V
RMS forward current 10 A
Average forward current Tc = 165°C
δ = 0.5
per diode
per device
Surge non repetitive forward current tp = 10 ms sinusoidal 180 A
Repetitive peak reverse current tp = 2 µs square F = 1kHz 1 A
Storage temperature range - 65 to + 175
stg
5
10
°
Tj Maximum operating junction temperature * 175 ° C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* :
July 1999 - Ed: 1B
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
A
C
1/6
STPS10H100CT/C G/CG - 1
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case Per diode 2.2
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
Total 1.3
Coupling 0.3
th(c)
°
C/W
°
C/W
STATIC ELECTRICAL CHARACTER ISTICS
(per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
* Reverse leakage current Tj = 25°CV
R
= V
R
RRM
3.5
Tj = 125°C1.34.5mA
V
** Forward voltage drop Tj = 25°CI
F
= 5 A 0.73 V
F
Tj = 125°C0.570.61
Tj = 25°CI
= 10 A 0.85
F
Tj = 125°C0.660.71
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the foll owing equati on :
P = 0.51 x I
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
F(AV)
+ 0.02 x I
F2(RMS)
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5, per diode).
µ
A
PF(av)(W)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
δ = 0.1
δ = 0.05
δ = 0.2
IF(av) (A)
δ = 0.5
δ
δ = 1
T
=tp/T
2/6
IF(av)(A)
6
5
4
3
2
tp
1
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
Rth(j-a)=15°C/W
Tamb(°C)
Rth(j-a)=Rth(j-c)
Loading...