SGS Thomson Microelectronics STPS10150CT Datasheet
®
STPS10150CT/CG
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2x5A
150 V
Tj 175°C
V
(max) 0.75 V
F
FEATURES AND BENEFITS
HIGH JUNCTION TEMPERATURE CAPABILITY
■
GOOD TRADE OFF BETWEEN LEAKAGE CUR-
■
RENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
■
■ AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power Supplies.
A1
A2
K
D2PAK
STPS10150CG
A1
K
A2
A1
TO-220AB
STPS10150CT
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
Repetitive peak reverse voltage 150 V
RMS forward current 10 A
Average forward current
δ = 0.5
TO-220AB
D2PAK
Tc = 155°C per diode
per device
Surge non repetitive forward current tp = 10 ms sinusoidal 120 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 3100 W
Storage temperature range - 65 to + 175 °C
stg
5
10
Tj Maximum operating junction temperature 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
July 2003 - Ed: 5B
A
1/5
STPS10150CT/CG
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
F
Pulse test : * tp=5ms,δ<2%
To evaluate the conduction losses use the following equation:
P = 0.65 I
Junction to case TO-220AB / D2PAK Per diode 4 °C/W
TO-220AB / D
2
PAK Total 2.4
TO-220AB / D2PAK Coupling 0.7
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage current Tj = 25°C VR=V
th(c)
RRM
2.0 µA
Tj = 125°C 0.40 2.0 mA
** Forward voltage drop Tj = 25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
** tp = 380 µs, δ <2%
+ 0.02 I
F(AV)
F2(RMS)
= 5 A 0.92 V
F
= 5 A 0.69 0.75
F
=10A 1
F
= 10 A 0.79 0.85
F
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
δ = 0.05
2/5
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
6
5
4
3
2
1
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
Tamb(°C)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
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