SGS Thomson Microelectronics STPR320 Datasheet
ULTRA-FASTRECOVERY RECTIFIER DIODES
MAINPRODUCTCHARACTERISTICS
STPR320
I
F(AV)
V
RRM
3A
200 V
Tj (max) 150°C
(max) 0.99 V
V
F
trr (max) 30 ns
FEATURES
SUITEDFORSMPS
LOWLOSSES
LOW FORWARD AND REVERSERECOVERY
TIME
HIGHSURGECURRENT CAPABILITY
DESCRIPTION
Low cost single chip rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DCconverters.
Packagedin F126, this device is intended for use
in low voltage, high frequency inverters, free
wheelingandpolarityprotectionapplications.
F126
(JEDECDO-204AC)
ABSOLUTE MAXIMUM (limitingvalues)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
Repetitivepeak reverse voltage 200 V
Averageforwardcurrent Tl=60°C
3A
δ = 0.5
I
FSM
Surge non repetitiveforwardcurrent tp=10ms
30 A
sinusoidal
T
stg
Storagetemperaturerange - 65 to + 150 °C
Tj Maximumoperating junctiontemperature 150 °C
October 1999-Ed:1A
1/5
STPR320
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th(j-l)
Junctionlead(L=5mm) 25 °C/W
STATICELECTRICAL CHARACTERISTICS
Symbol Parameters Test conditions Min. Typ. Max. Unit
I
*
R
Reverseleakage
current
V
F**
Forwardvoltage
drop
Pulse test : * tp= 5ms, δ <2%
** tp = 380 µs, δ <2%
T
=25°CV
j
T
= 100°C
j
R=VRRM
0.2 0.5 mA
10 µA
Tj= 125°CIF=3 A 0.8 0.99 V
= 125°CIF=6 A 0.95 1.20
T
j
=25°CI
T
j
=6 A 1.25
F
Toevaluate the conductionlossesuse the following equation:
P= 0.78x I
F(AV)
+ 0.070 x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Test conditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
Tj=25°CI
=25°CI
j
=25°CI
j
=0.5A
F
I
=1A
R
=3A
F
= 1.1x VFmax
V
FR
=3A dIF/dt = 50 A/µs3 V
F
Irr= 0.25A 30 ns
dI
/dt = 50 A/µs20ns
F
Fig. 1 :
Averageforward power dissipation versus
averageforwardcurrent.
2/5
Fig. 2 :
Peakcurrentversus form factor.
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