SGS Thomson Microelectronics STPR2420CT Datasheet
STPR2420CT
ULTRA-FASTRECOVERY RECTIFIER DIODES
MAINPRODUCTSCHARACTERISTICS
I
F(AV)
V
RRM
2 x 12 A
200 V
Tj (max) 150°C
(max) 0.99 V
V
F
trr (max) 30 ns
FEATURES
SUITEDFORSMPS
LOWLOSSES
LOW FORWARD AND REVERSERECOVERY
TIME
HIGHSURGE CURRENT CAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
Low cost dual center tap rectifier suitedforSwitch
ModePower Supply andhigh frequencyDC to DC
converters.
Packagedin TO-220AB,this deviceisintended for
use in low voltage, high frequency inverters, free
wheelingand polarityprotectionapplications.
A1
A2
TO-220AB
A1
K
A2
K
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitivepeakreverse voltage
RMSforward current
Averageforwardcurrent
δ = 0.5
Tc= 115°C Per diode
Per device
Surgenon repetitiveforwardcurrent Tp = 10 ms
200 V
30 A
12 A
24
120 A
Sinusoidal
T
stg
Tj
July 1999- Ed:2B
Storagetemperaturerange
Maximumoperating junctiontemperature
- 65 to +150 °C
+ 150
1/5
STPR2420CT
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junctionto case Perdiode
Total
Coupling
2.5
1.4
0.23
Whenthe diodes1 and 2 areused simultaneously:
∆
Tj(diode1) = P(diode1) x Rth(j-c)(Per diode)+ P(diode2) x Rth(c)
STATICELECTRICALCHARACTERISTICS
Symbol Parameters Testconditions Min. Typ. Max. Unit
*
I
R
**
V
F
Pulse test : * tp= 5 ms, δ <2%
Reverseleakage current Tj= 25°CV
Forwardvoltage drop Tj= 125°CI
** tp= 380 µs, δ <2%
Tj= 100°C
Tj= 125°CI
Tj= 25°CI
R=VRRM
=12A
F
=24A
F
=24A
F
50 µA
0.8 mA
0.99 V
1.20
1.25
Toevaluate theconductionlossesuse the following equation:
P= 0.78x I
F(AV)
+ 0.0175x I
F2(RMS)
RECOVERYCHARACTERISTICS
°C/W
Symbol Testconditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
=25°CI
j
=25°CI
j
Tj=25°CI
= 0.5A Irr= 0.25A IR=1A
F
= 1A tr=10 ns VFR= 1.1x V
F
= 1A tr=10 ns
F
30 ns
F
20
3V
2/5
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