SGS Thomson Microelectronics STPR1620CT, STPR1620CG Datasheet
STPR1620CG
ULTRA-FASTRECOVERY RECTIFIER DIODES
MAINPRODUCTSCHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 150°C
V
(max) 0.99 V
F
trr (max) 30 ns
FEATURES
SUITEDFOR SMPS
LOW LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIME
HIGHSURGECURRENT CAPABILITY
2x8A
200 V
STPR1620CT
A1
K
A2
K
K
A2
A1
D2PAK
STPR1620CG
DESCRIPTION
Low cost dual center tap rectifier suited for
Switched Mode Power Supplies and high
frequency DC to DCconverters.
Packaged in D
2
PAK or TO-220AB,this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS
(limiting values, per diode)
TO-220AB
STPR1620CT
A1
A2
K
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
Repetitivepeak reverse voltage 200 V
RMSforwardcurrent 20 A
Averageforward current
δ
= 0.5
Surgenonrepetitiveforwardcurrent
Tc=120°C Per diode
Per device
tp=10ms sinusoidal
8
16
80 A
Storagetemperaturerange - 65 to+ 150 °C
Maximumoperating junctiontemperature
150
A
°
C
July 1999-Ed:2B
1/6
STPR1620CG / STPS1620CT
THERMALRESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junctionto case Per diode
Total 1.8 °C/W
3.0 °C/W
R
th (c)
Coupling 0.6 °C/W
Whenthe diodes1 and 2 are usedsimultaneously:
∆
Tj(diode1) = P(diode1) x Rth(j-c)(Per diode)+ P(diode2) x Rth(c)
STATICELECTRICAL CHARACTERISTICS
Symbol Test conditions Min. Typ. Max. Unit
T
*
I
R
V
F**
Pulse test : * tp= 5 ms, δ <2%
=25°CV
j
=100°C 0.2 0.6 mA
T
j
Tj=125°CI
=125°CI
T
j
T
=25°CI
j
** tp = 380 µs, δ <2%
=V
R
RRM
=8A
F
= 16 A 0.95 1.20
F
= 16 A 1.25
F
0.8 0.99 V
50
Toevaluate the conductionlossesuse the followingequation:
P= 0.78x I
F(AV)
+ 0.026 x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Test conditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
=25°CI
j
=25°CI
j
Tj=25°CI
= 0.5A
F
=1A
I
R
=3A
F
= 1.1 x VFmax
V
FR
=3A dIF/dt =50 A/µs3V
F
Irr = 0.25A 30 ns
dI
/dt =50 A/µs
F
20 ns
µ
A
2/6
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