SGS Thomson Microelectronics STPR1220F, STPR1210F, STPR1220D, STPR1210D Datasheet
ULTRAFAST RECOVERY RECTIFIERDIODES
.SUITEDFOR SMPS
.LOW LOSSES
.LOW FORWARDAND REVERSE RECOVERY
TIME
.HIGH SURGE CURRENT CAPABILITY
.HIGH AVALANCHE ENERGY CAPABILITY
STPR1210D/F
STPR1220D/F
A
K
DESCRIPTION
Low cost single chiprectifier suited for switchmode
powersupplyand high frequency DC toDC converters.
Packaged in TO220AC and ISOWATT220AC, this
deviceis intended for use in low voltage, high frequency inverters, free wheeling andpolarity protection applications.
ABSOL UT E RATI NGS (limiting values)
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
I
FSM
TstgTjStorage and Junction Temperature Range - 65 to +150
RMS ForwardCurrent 30 A
AverageForwardCurrent
δ =0.5
SurgeNon Repetitive Forward Current Tp =10 ms
TO220AC Tc = 115°C12 A
ISOWATT220AC Tc = 80°C
TO2 20AC
(Plastic)
STPR1210D
STPR1220D
Sinusoidal
- 65 to +150
ISOWATT220AC
(Plastic)
STPR1210F
STPR1220F
120 A
K
A
°C
Symbol Parameter STPR Unit
1210D
1210F
V
RRM
TH ERMAL R ESISTANCE
Symbol Parameter Valu e Un it
Rth (j-c) Junction-case TO220AC 2.5 °C/W
June 1992 Ed: 1A
Repetitive Peak ReverseVoltage 100 200 V
ISOWATT220AC 5.0
1220D
1220F
1/6
STPR1210D/F / STPR1220D/F
ELECTRIC A L CHARACT ER ISTI C S
STATIC CHARACTERISTICS
Symbol Tests Conditions Min. Typ. Max. Unit
IR*Tj=25°CV
Tj = 100°C 0.8 mA
=V
R
RRM
50 µA
VF** Tj = 125°CI
Tj = 125°CI
Tj = 25°CI
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2%
= 12 A 0.99 V
F
= 24 A 1.20
F
= 24 A 1.25
F
RECOVERY CHARACTERISTICS
Symbol Tests Conditions Min. Typ. Max. Unit
trr Tj = 25°CI
tfr Tj = 25°CI
V
FP
To evaluate the conduction losses use the following equation:
P = 0.78 x I
Tj = 25°CI
+ 0.0175I
F(AV)
F2(RMS)
= 0.5 A IR= 1A Irr =0.25 A 30 ns
F
= 1 A tr = 10 ns VFR= 1.1 x V
F
= 1 A tr = 10 ns 3 V
F
F
20 ns
age forward current.
2/6
Fig.2 : Peak current versus form factor.Fig.1 : Average forward power dissipation versus aver-
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