SGS Thomson Microelectronics STPR120A Datasheet
®
HIGH EFFICIENCY FAST RECOVERY DIODE
MAIN PRODUCT CHARACTERISTICS
STPR120A
I
F(AV)
V
RRM
t
(max) 35 ns
rr
1A
200 V
FEATURES AND BENEFITS
VERY LOW SWITCHING LOSSES
n
LOW FORWARD VOLTAGE DROP
n
SURFACE MOUNT DEVICE
n
FAST RECTIFIER EPITAXIAL DIODE
n
DESCRIPTION
Single chip rectifier suited to Switched Mode
Power Supplies and high frequency DC/DC converters.
Packaged in SMA, this surface mount device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values)
SMA
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 200 V
RMS forward current 8 A
Average forward current T
Lead
= 125°C
1A
δ = 0.5
I
FSM
Surge non repetitive forward current tp = 10 ms
30 A
Sinusoidal
T
stg
Storage temperature range - 65 to + 150 °C
Tj Maximum junction temperature 150 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-l)
April 2000 - Ed: 3
Junction to lead 30 °C/W
1/5
STPR120A
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
I
* Reverse leakage current Tj = 25°C VR=V
R
RRM
Tj = 125°C 180 400
V
** Forward voltage drop Tj = 25°C IF= 1 A 0.94 V
F
3 µA
Tj = 150°C I
Pulse test : * tp = 5ms, δ <2%
** tp = 380 µs, δ <2%
= 1 A 0.69 0.74
F
RECOVERY CHARACTERISTICS
Symbol Tests Conditions Min. Typ. Max. Unit
trr Tj = 25°C I
= 0.50 A Irr= 0.25 A
F
25 ns
IR=1A
I
=1A dIF/dt=50A/µs
F
VR=V
RRM
t
FR
Tj = 25°C IF=1A dIF/dt = 100 A/µs
25 35
25
Measured at 1 V
V
FP
Tj = 25°C IF=1A dIF/dt = 100 A/µs5V
To evaluate the maximum conduction losses use the following equation :
P=0.62xI
F(AV)
+0.12xI
F2(RMS)
2/5
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