SGS Thomson Microelectronics STPR1020CT, STPR1020CG, STPR1020CFP, STPR1020CF, STPR1020CB Datasheet



STPR1020CB/CG/CT/CF/CFP

ULTRA-FAST RECOVERY RECTIFIER DIODES

MAIN PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

2x5A

200 V

Tj (max) 150°C

VF(max) 0.99 V

trr (max) 30 ns

FEATURES

n SUITED FOR SMPS
n LOW LOSSES
n LOW FORWARD AND REVERSERECOVERY

TIME

n HIGH SURGE CURRENT CAPABILITY
n INSULATED PACKAGES: ISOWATT220AB /

TO-220FP
Insulation Voltage = 2000V DC
Capacitance = 12 pF

DESCRIPTION

Dual center tap rectifier suited for Switched Mode
Power Supplies and high frequency DC to DC
converters.

Packaged in DPAK, D2PAK, TO-220AB,
TO-220FP or ISOWATT220AB, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.

ABSOLUTE MAXIMUM (limiting values, per diode)

A1

TO-220AB

STPR1020CT

A1

TO-220FP

STPR1020CFP

K

A2

K

A1

DPAK

STPR1020CB

PRELIMINARY DATASHEET

A1

A2

K

A2

A2

K

ISOWATT220AB

STPR1020CF

K

D2PAK

STPR1020CG

A1

A1

A2

K

A2

K

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

Repetitive peak reverse voltage 200 V
RMS forward current D2PAK / TO-220AB / ISOWATT220AB /

10 A

TO-220FP

I

F(AV)

Average forward cur­rent
δ = 0.5

DPAK
D2PAK / DPAK

Tc=125°C Per diode

TO-220AB
ISOWATT220AB Tc=115°C Per device 10

7A
5A

TO-220FP Tc=110°C Per device 10

I

FSM

T

stg

March 2000- Ed: 2A

Surge non repetitive forward current tp=10ms sinusoidal 50 A
Storage temperature range - 65 to + 150 °C

1/10

STPR1020CB/CG/CT/CF/CFP

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

Junction to case

TO-220AB / D2PAK / DPAK

Per diode 4.0 °C/W
Total 2.4

ISOWATT220AB

TO-220FP

Per diode 6.0
Total
Per diode

4.0

6.5

Total 5

R

th (c)

Coupling

TO-220AB / D2PAK / DPAK
ISOWATT220AB
TO-220FP

0.7

2.0

3.5

When diodes 1and 2 areused simultaneously :
∆ Tj(diode 1)= P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameters Test conditions Min. Typ. Max. Unit

IR* Reverse leakage

current

V

F**

Forward voltage
drop

Pulse test : * tp = 5 ms, δ <2%

** tp= 380 µs, δ <2%

Tj=25°CV

R=VRRM

50 µA
Tj= 100°C 0.6 mA
Tj= 125°CI
Tj= 125°CI
Tj=25°CI

= 5 A 0.8 0.99 V

F

= 10 A 0.95 1.20

F

= 10 A 1.25

F

To evaluate the conduction losses use the followingequation :
P = 0.78 x I

F(AV)

+ 0.042 x I

F2(RMS)

RECOVERY CHARACTERISTICS

Symbol Test conditions Min. Typ. Max. Unit

trr Tj=25°CI

= 0.5A

F

Irr = 0.25A 30 ns

IR=1A

tfr Tj=25°CI

=1A

F

dIF/dt = 50 A/µs20 ns

VFR= 1.1 xVFmax

VFPTj=25°CI

2/10

=1A dIF/dt = 50 A/µs3 V

F

STPR1020CB/CG/CT/CF/CFP

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

PF(av)(W)

7
6

δ = 0.05

5

δ = 0.1

δ = 0.2

δ = 0.5

δ =1

4
3
2
1
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

IF(av)(A)

δ

=tp/T

T

tp

Fig. 3-1: Average forward current versus ambient
temperature (δ=0.5,TO-220AB, DPAK, D2PAK).

IF(av)(A)

6
5
4
3
2

T

1

=tp/T

δ

0

0 25 50 75 100 125 150

tp

Rth(j-a)=15°C/W

Tamb(°C)

Rth(j-a)=Rth(j-c)

Fig. 2: Peakcurrentversus formfactor (per diode).

IM(A)

50
45

T

40
35

P=5W

δ

=tp/T

tp

30
25
20
15

P=2.5W

10

5
0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P=7.5W

P=10W

δ

Fig. 3-2: Average forward current versus
ambient temperature (δ = 0.5, ISOWATT220AB,
TO-220FP).

IF(av)(A)

6
5
4
3
2

T

1

=tp/T

δ

0

0 25 50 75 100 125 150

tp

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C/W

Tamb(°C)

TO-220FP

ISOWATT220AB

Fig. 4-1:Nonrepetitive surgepeak forward current
versus overload duration (TO-220AB, DPAK,
D2PAK).

IM(A)

70
60
50
40
30
20

IM

10

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=125°C

Fig. 4-2:Nonrepetitive surgepeak forward current
versus overload duration (ISOWATT220AB).

IM(A)

60
50
40
30
20

IM

10

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=100°C

3/10