SGS Thomson Microelectronics STPR1020CB-TR Datasheet

®
STPR1020CB(-TR)
HIGH EFFICI EN CY FAST RECO VE RY REC T IFIER DIODES
MAIN PRODUCT CHARACTERISTIC S
I
F(AV)
RRM
(max) 35 ns
t
rr
2 x 5 A
200 V
FEATURES AND BENEFITS
SUITED FOR SMPS AND DRIVES SURFACE MOUNT VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSS ES HIGH SURGE CURRENT CA PABILITY SURFACE M OUNT DE V ICE TAPE AND REEL OPTION : -TR
DESCR IPTION
Dual rectifier suited for Switch Mode and high fre­quency converters.
Packaged in DPAK, this surface mount device is intended for use in low voltage, high frequency in­verters, free wheeling and polarity protection appli­cations.
1
PRELIMINARY DATASHEET
2, 4(TAB)
4
3
2
3
1
DPAK
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
RRM
RSM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive Peak Reverse Voltage 200 V Non Repetitive Surge Reverse V olt age 220 V RMS Forward Current Per diode 10 A Average Forward Current
T
= 130°C δ = 0.5
case
Surge Non Repetitive Forward Current
Per diode Per device
5
10
Per diode 70 A
tp = 10 ms Sinusoidal
Tstg Storage Temperature Range - 40 to + 150
Tj Max. Junction Temperature 150 °C
February 1999 - Ed : 2B
°
C
1/3
STPR1020CB(-T R)
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to Case Thermal Resistance Per diode 5
Coupling °C/W
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode) x R
(per diode) + P(diode 2) x R
th
Total 2.7
th (c)
°
C/W
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
I
* Reverse leakage Current Tj = 25°CV
R
= V
R
RRM
20
Tj = 100°C0.150.5mA
V
** Forward Voltage drop Tj = 25°CI
F
Tj = 100°CI
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2%
To evaluate the maximum conduction losses use the foll owing equati on : P = 0.7 x I
F(AV)
+ 0.030 I
F2(RMS)
= 10 A 1.25 V
F
= 5 A 0.8 0.85
F
RECOVERY CH ARACTE RIST ICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
t
fr
V
FP
Tj = 25°C IF = 1A
V
= 30V
F
Tj = 25°C IF = 1A
V
= 1.1 x V
FR
F
Tj = 25°C IF = 1A tr = 10 ns 5 V
/dt = -50 Α/ms 35 ns
dI
F
tr = 10 ns 20 ns
µ
2/3
Loading...
+ 1 hidden pages