SGS Thomson Microelectronics STPIC6A259MTR, STPIC6A259M Datasheet

POWER LOGIC 8-BIT ADDRESSABLE LATCH

■ LOW R

■ OUTPUT SHORT-CI RCUIT PROTECTION

■ 75mJ AVAILANCHE ENERGY

■ EIGHT 350mA DMOS OUTPUTS

■ 50V SWITCHING CAPABILITY

■ FOUR DISTINCT FUNCTION MODES

■ LOW POWER CONSUMPTION

DS(on)

: 1Ω TYP

STPIC6A259

PRELIMINARY DATA

DESCRIPTION

This power logic 8-bit addressable latch cont rols open-drain DMOS transistor outputs and is designed for general-purpose storage applications in digital systems. Specific uses include working registers, serial-holding registers, and decoders or demultiplexers. This is a multifunctional device capable of operating as eight addressable latches or an 8-line demultiplexer with active-low DMOS outputs. Each open-drain DMOS transistor features an independent chopping current-limiting circuit to prevent damage in the case of a short circuit. Four distinct modes of operation are selectable by controlling the clear (CLR

) and enable ( G) inputs and enumerated in the function table. In the addressable-latch mode, data at the data-in (D) terminal is written into the addressed latch. The addressed DMOS-transistor output inverts the data input with all unadressed DMOS-transistor output remaining in their previuous state. In the MOS-transistor outputs remain in their previous states and are unaffecte d by the data or address inputs. To eliminate the possibility of entering erroneus data in the latch, enable G should be

SOP

held high (inactive) while the address lines are changing. In the 8-line demoul tiplexing mode, the addressed output is inverted with res pectto the D input and all other output are high. In the clear mode, all out puts are high an d unaffected b y the address and data inputs. Separate power ground (PGND) and logic ground (LGND) terminals are providied to facilitate maximum system flexibility. All PGND terminals are interally connected, and eac h pGND terminal must be externally connected to the power system ground in o rder to minimize parasit ic impedance. A single-point connection between LGND and PGND must b e mad e external ly in a m anner t hat reduces crosstalk between the logi and load circuits. The STPIC6A259 is offered in a termally enhanced SO-24 package. The STPIC6A259 is characterized for operation over the operating

case temperature range -40°C to 125°C.

ORDERING CODES

Type Package Comments

STPIC6A259M SO-24 Batwing (Tube) 50parts per tube / 20tube per box

STPIC6A259MTR SO-24 Batwing (Tape & Reel) 2500 parts per reel

1/13March 2001

This is preliminary information on a new product now in development are or undergoing evaluation. Details subject to change without notice.

STPIC6A259

LOGIC SYMBOL AND PIN CONFIGURATION

FUNCTIONAL TABL E FUNCTIONAL TABLE

INPUTS OUTPUT OF

CLR

HLH L Q HLL H Q HHX Q

L L H L H 8-Line LLL H H L H X H H Clear

ADDRESSED

DRAIN

EACH

OTHER

DRAIN

io io

FUNCTION

Addressable Latch

Memory

Demultiplexer

SELECT INPUTS

S2 S1 S0

LLL 0 LLH 1 LHL 2

LHH 3 HLL 4 HLH 5 HHL 6 HHH 7

INPUT AND OUTPUT EQUIVALENT CIRCUITS

DRAIN ADDRESSED

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STPIC6A259

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

I I

P P T T

Logic Supply Voltage (See Note 2)

Logic Input Voltage Range

Power DMOS Drain to Source Voltage (See Note 2)

Continuous Source to Drain Diode Anode Current Pulsed Source to Drain Diode Anode Current (See Note 3) Pulsed Drain Current, Each Output, All Output ON (TC=25°C)

Continuous Current, Each Output, All Output ON (TC=25°C)

Peak Drain Current Single Output (TC=25°C) (See Note 3)

Single Pulse Avalanche Energy (See Note 6)

Avalanche Current (See Note 4) Continuous total dissipation (TC ≤ 25°C)

Continuous total dissipation (TC = 125°C)

Operating Virtual Junction Temperature Range

Operating Case Temperature Range

Storage Temperature Range

stg

Lead Temperature 1.6mm (1/16inch) from case for 10 seconds

-0.3 to 7 V 50 V

1A 2A

1.1 A

350 mA

1.1 A 75 mJ

600 mA

1750 mW

350 mW

-40 to +150 °C

-40 to +125 °C

-65 to +150 °C 260 °C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition i s not implied.

THERMAL DATA

Symbol Parameter Unit

thj-case

thj-amb

Thermal Resistance Junction-case Thermal Resistance Junction-ambient

10 °C/W 50 °C/W

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Min. Max. Unit

V I

t t T

Logic Supply Voltage 4.5 5.5 V

High Level Input Voltage 0.85V

Low Level Input Voltage 0 0.15V

Pulse Drain Output Current (TC=25°C, VCC=5V) (see note 3, 5) -1.8 0.6 A Set-up Time, D High Before G ↑ (see Figure 2) 10 ns

Hold Time, D High Before G ↑ (see Figure 2) 5 ns

Pulse Duration (see Figure 2) 15 ns

Operating Case Temperature -40 125 °C

V V

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STPIC6A259

DC CHARACTERISTICS (VCC=5V, TC= 25°C, unless otherwise specified.)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(BR)DSX

I I

(nom)

DS(on)

Drain-to-Source breakdown

ID = 1mA 50 V

Voltage Source-to-Drain Diode

Forward Voltage High Level Input Current VI = V

Low Level Input Current VI = 0 -1 µA

Logic Supply Current IO = 0 0.5 5 mA

Output Current at Which

Chopping Starts

Nominal Current V

IF = 350 mA (See Note 3) 0.8 1.1 V

TC = 25°C (See Note 3 and Figg.

0.6 0.8 1.1 A

3, 4)

= 0.5V I

DS(on)

(nom)

= I

350 mA VCC = 5V TC=85°C (See Note 5, 6, 7)

Off-State Drain Current VDS = 40V TC=25°C 0.1 1 µA

= 40V TC=125°C 0.2 5 µA

Termination Resistance (See Note 5, 6 and figg. 9,

10)

ID = 350mA TC=25°C 1 1.5 Ω I

= 350mA TC=125°C 1.7 2.5 Ω

1 µA

SWITCHING CHARACTERISTICS (V

=5V, TC= 25°C, unless otherwise specified.)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

PHL

Propagation Dealy Time, High to Low Level Output

CL = 30pF ID = 350mA (See Figg. 1, 2, 11)

30 ns

from D

PLH

Propagation Dealy Time, Low to High Level Output

125 ns

from D

Rise Time, Drain Output 60 ns

Fall Time, Drain Output 30 ns

Reverse Recovery Current

Rise Time

Reverse Recovery Time 300 ns

Note 1: A l l Vol tage valuea are with res pect to LGN D and PGND Note 2: Each power DMOS source is inte rnally connected to GND Note 3: Pul se duration ≤ 100ms Note 4: Dr ai n Supply Voltage = 15V, start i ng junction t em perature (T

Note 5: Technique should limit T Note 6: These paramet ers are measured with voltage sensing contacts separate from the current-carrying contacts. Note 7: No minal Current i s defined for a consistent co m parison betw een devices f rom different sources. It is th e current that p roduces a voltage drop of 0.5V at T

and duty cy cl e ≤ 2%

- TC to 10°C maximum

= 85°C.

IF = 350mA di/dt = 20A/µs (See Note 5, 6 and Fig. 5)

) = 25°C. L = 210µ H and IAS = 600mA (See Fig. 6)

100 ns

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