SGS Thomson Microelectronics STP9NK90ZFP, STB6NK90Z Datasheet
1/12March 2003
STP6NK90Z - STP6NK90ZFP
STB6NK90Z
N-CHANNEL 900V - 1.56Ω - 5.8A TO-220/TO-220FP/D2PAK
Zener-Protected SuperMESH™Power MOSFET
■ TYPICAL R
DS
(on) = 1.56 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GAT E CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VER Y GO OD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of S T’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv /dt capability for the
most demanding app lications. Such series com plements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LI GHTING
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
Pw
STP6NK90Z
STP6NK90ZFP
STB6NK90Z
900 V
900 V
900 V
<2Ω
<2Ω
<2Ω
5.8 A
5.8 A
5.8 A
140 W
30 W
140 W
SALES TYPE MARKING PACKAGE PACKAGING
STP6NK90Z P6NK90Z TO-220 TUBE
STP6NK90ZFP P6NK90ZFP TO-220FP TUBE
STB6NK90ZT4 B6NK90Z
D
2
PAK
TAPE & REEL
TO-220 TO-220FP
1
2
3
1
3
D2PAK
INTERNAL SCHEMATIC DIAGRAM
STP6NK90Z - STP6NK90ZFP - STB6NK90Z
2/12
ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area
(1) I
SD
≤5.8A, di/dt ≤200A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integ rated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
STP6NK90Z / STB6NK90Z STP6NK90ZFP
V
DS
Drain-source Voltage (VGS=0)
900 V
V
DGR
Drain-gate Voltage (RGS=20kΩ)
900 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at TC= 25°C
5.8 5.8 (*) A
I
D
Drain Current (continuous) at TC= 100°C
3.65 3.65 (*) A
IDM()
Drain Current (pulsed) 23.2 23.2 (*) A
P
TOT
Total Dissipation at TC= 25°C
140 30 W
Derating Factor 1.12 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Viso Insulation Withstand Voltage (DC) -- 2500 V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150 °C
TO-220
D
2
PAK
TO-220FP Unit
Rthj-case Thermal Resistance Junction-case Max 0.89 4.2 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max
(When
mounted on minimum Footprint)
60 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
5.8 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID=IAR,VDD=50V)
300 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
3/12
STP6NK90Z - STP6NK 90Z FP - STB6NK90Z
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SP ECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when VDSincreases from 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID= 1mA, VGS= 0 900 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
VDS= Max Rating, TC= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID
= 100µA
3 3.75 4.5 V
R
DS(on)
Static Drain-source On
Resistance
VGS=10V,ID= 2.9 A 1.56 2 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS=15V,ID=2.9A 5 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V,f=1MHz,VGS= 0 1350
130
26
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
VGS=0V,VDS= 0V to 720V 70 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VDD=450V,ID=3A
RG= 4.7Ω ,VGS=10V
(Resistive Load see, Figure 3)
17
20
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=720V,ID= 5.8 A,
V
GS
=10V
46.5
8.5
25
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
VDD= 450 V, ID=3A
R
G
=4.7Ω,VGS=10V
(Resistive Load see, Figure 3)
45
20
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 720V, ID= 5.8 A,
RG=4.7Ω , VGS=10V
(Inductive Load see, Figure 5)
11
12
20
ns
ns
ns
Symbol Parameter T est Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
5.8
23.2
A
A
VSD(1)
Forward On Voltage
ISD= 5.8 A, VGS=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5.8 A, di/dt = 100A/µs
VDD=36V,Tj= 150°C
(see test circuit, Figure 5)
840
5880
14
ns
nC
A
STP6NK90Z - STP6NK90ZFP - STB6NK90Z
4/12
Thermal Impedance For TO-220/ D2PAK
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D2PAK
Transfer Characteristics
Output Characteristics
Thermal Impedance For TO-220FP
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