SGS Thomson Microelectronics STP9NC60FP, STP9NC60 Datasheet

STP9NC60



N - CHANNEL 600V- 0.6Ω - 9A TO-220/TO-220FP

TYPE V

ST P9 NC60 ST P9 NC60FP

ν TYPICALR ν EXTREMELYHIGHdv/dtCAPABILITY ν 100%AVALANCHETESTED ν NEWHIGH VOLTAGE BENCHMARK ν GATECHARGE MINIMIZED

DS(on)

DSS

600 V 600 V

= 0.6 Ω

DESCRIPTION

The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.

APPLICATIONS

ν HIGHCURRENT, HIGH SPEEDSWITCHING ν SWITHMODE POWERSUPPLIES (SMPS) ν DC-ACCONVERTERSFOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTORDRIVER

R

DS(on)

<0.75Ω <0.75Ω

I

D

9.0 A

5.2 A

STP9NC60FP

PowerMESH ΙΙ MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

ST P9NC6 0 ST P9 NC60FP

V

I

DM

P

dv/dt(

V

T

(•) Pulse width limited by safe operating area (1)ISD≤ 9A, di/dt ≤ 200 A/µs, VDD≤ V

February 2000

Drain-source Vol t age (VGS= 0) 600 V

DS

Drain- gate V oltage (RGS=20kΩ)

DGR

Gate-s ource Voltage ± 30 V

GS

I

Drain C urr ent (c ont inuous) at Tc=25oC9.05.2A

D

Drain C urr ent (c ont inuous) at Tc= 100oC5.73.3A

I

D

600 V

(•) Drain Curr ent (p ulsed) 36 36 A

Tot al Dissipation at Tc=25oC 125 40 W

tot

Derating Fact or 1.0 0.32 W/

1) Peak Di ode Rec ov ery v olt a ge slope 4.5 4.5 V/ ns

Insulation Withstand Voltage (DC)  2000 V

ISO

St orage Te mper ature -65 to 150

stg

T

Max. Oper ating Ju nction Tem perat ure 150

j

(BR)DSS

,Tj≤T

JMAX

o

C

o

C

o

C

1/9

STP9NC60/FP

THERMAL DATA

TO-220 TO - 220FP

R

thj-cas e

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symb ol Parameter Max Val ue Uni t

I

AR

E

Therma l Resist ance Junction- case Max 1.0 3. 12 Therma l Resist ance Junction- ambient Max

Therma l Resist ance Case-sink Typ Maxim um Lea d Te m pe rat ur e For Soldering Purpose

l

Avalanc h e Current, Repetit ive or Not-Repetitive (pulse width limited by T

Single Pulse Av alanche E nergy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

62.5

0.5

300

9A

850 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

OFF

Symb ol Param et er Test C o n diti o n s Mi n . Typ . Max. Unit

V

(BR) DSS

Drain-s ource

= 250 µAVGS=0

I

D

600 V

Break down Voltage

I

DSS

I

GSS

Zero G ate Voltage Drain Current (V

GS

Gate-body Leak a ge Current (V

DS

=0)

V

=MaxRating

DS

= Max Rating Tc= 125oC

V

DS

= ± 30 V

V

GS

1

50

± 100 nA

ON (∗)

Symb ol Param et er Test C o n diti o n s Mi n . Typ . Max. Unit

V

GS(th)

R

DS(on)

Gate Thre shold Voltage Static Drain- s ource O n

V

DS=VGSID

=250µA

VGS= 10V ID=4A 0.6 0.75 Ω

234V

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

9.0 A

VGS=10V

DYNAMIC

Symb ol Param et er Test C o n diti o n s Mi n . Typ . Max. Unit

g

(∗)Forward

fs

Transconductance Input Capacitance

iss

Output Capacitance Reverse Transfer

rss

C

oss

C

Capacit ance

VDS>I

D(on)xRDS(on)maxID

=4A 10 S

VDS=25V f=1MHz VGS= 0 1400

196

31

µA µA

pF pF pF

2/9

STP9NC60/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol Param et er Test C o n diti o n s Mi n . Typ . Max. Unit

t

d(on)

t

Turn-on Delay T ime Rise Tim e

r

VDD=300V ID=4.5A

=4.7 Ω VGS=10V

R

G

(Resis t i ve Load, s ee fi g. 3)

Q Q Q

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

VDD=480V ID=9.0A VGS=10V 44

SWITCHING OFF

Symb ol Param et er Test C o n diti o n s Mi n . Typ . Max. Unit

t

d(off)

t

Turn-off Delay Time Fall T ime

f

VDD=300V ID=4.5A

=4.7 Ω VGS=10V

R

G

(Resis t i ve Load, s ee fi g. 3)

t

r(Voff)

t

Off -voltage Rise Time Fall T ime

f

Cross -over Time

c

VDD=480V ID=9.0A

=4.7 Ω VGS=10V

R

G

(Inductive Load, see f i g. 5 )

SOURCEDRAIN DIODE

28 15

62 nC

10.5

19.5

53 30

15 12 24

ns ns

nC nC

ns ns

ns ns ns

Symb ol Param et er Test C o n diti o n s Mi n . Typ . Max. Unit

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current

9.0 36

(pulsed)

(∗)ForwardOnVoltage ISD=9A VGS=0 1.6 V

V

SD

t

Q

Revers e R ecover y

rr

Time Revers e R ecover y

rr

=9A di/dt=100A/µs

I

SD

=100V Tj= 150oC

V

DD

(see test circuit, fig. 5)

610

5.4

Charge

I

RRM

Revers e R ecover y

17

Current

(∗) Pulsed: Pulse duration = 300µs, dutycycle 1.5 % (•) Pulse width limited by safe operatingarea

Safe OperatingArea for TO-220 Safe OperatingAreafor TO-220FP

A A

ns

µC

A

3/9