SGS Thomson Microelectronics STP9NB50FP, STP9NB50 Datasheet
STP9NB50
STP9NB50FP
N-CHANNEL 500V - 0.75
TYPE V
STP9NB50 500 V < 0.85 Ω 8.6 A
STP9NB50FP 500 V < 0.85 Ω 4.9 A
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DS
DSS
(on) = 0.75Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled withthe Company’s proprieraty edgetermination structure, gives the lowest R
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
R
DS(on)
DS(on)
I
D
per area,
Ω
- 8.6 A TO-220/TO-220FP
PowerMesh MOSFET
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
TO-220FP
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES ANDMOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP9NB50 STP9NB50FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
V
ISO
T
stg
T
(•)Pulse width limitedby safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC= 100°C
(●)
Drain Current (pulsed) 34.4 34.4 A
TotalDissipation at TC=25°C
Derating Factor 1 0.32 W/°C
Insulation Withstand Voltage (DC) - 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
(1)ISD<9A, di/dt<200A/µ,VDD<V
8.6 4.9 A
5.4 3.1 A
125 40 W
500 V
500 V
,TJ<T
(BR)DSS
JMAX
1/9May 2000
STP9NB50/FP
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
=25°C, ID=IAR,VDD=50V)
j
I
= 250 µA, VGS=0
D
= Max Rating
V
DS
=0)
DS
GS
=0)
V
= Max Rating, TC= 125 °C
DS
= ±30V
V
GS
500 V
8.6 A
520 mJ
1 µA
50 µA
±100 nA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS=VGS,ID
= 10V, ID= 4.3 A
V
GS
V
DS>ID(on)xRDS(on)max,
= 250 µA
VGS=10V
345V
0.75 0.85 Ω
8.6 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
(1)
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 175 pF
Reverse Transfer
Capacitance
DS>ID(on)xRDS(on)max,
ID= 4.3 A
V
= 25V, f = 1 MHz, VGS=0
DS
5.7 S
1250 pF
20 pF
2/9
STP9NB50/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
Q
gs
Q
gd
Turn-on Delay Time
Rise Time
TotalGate Charge
g
Gate-Source Charge 10.6 nC
Gate-Drain Charge 13.7 nC
SWITCHING OFF
Symbol Parameter TestConditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 11 ns
Cross-over Time 20 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 8.6 A
(2)
Source-drain Current (pulsed) 34.4 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 3.5 µC
Reverse Recovery Current 16.5 A
V
= 250 V,ID= 4.3 A
DD
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
V
= 400V, ID= 8.6 A,
DD
= 10V
V
GS
V
= 400V, ID= 8.6 A,
DD
=4.7Ω, VGS= 10V
R
G
(see test circuit, Figure 5)
ISD= 8.6 A, VGS=0
I
= 8.6 A, di/dt = 100A/µs,
SD
= 100V, Tj= 150°C
V
DD
(see test circuit, Figure 5)
19 ns
11 ns
32 45 nC
11.5 ns
1.6 V
420 ns
Safe Operating Area Safe OperatingArea for TO-220FP
3/9
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