SGS Thomson Microelectronics STW8NK80Z, STP8NK80ZFP, STP8NK80Z Datasheet
STP8NK80Z - STP8NK80ZFP
STW8NK80Z
N-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP8NK80Z
STP8NK80ZFP
STW8NK80Z
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GAT E CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VER Y GO OD MANUFACTURING
800 V
800 V
800 V
(on) = 1.3 Ω
DS
DSS
R
DS(on)
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
I
D
6.2 A
6.2 A
6.2 A
Pw
140 W
30 W
140 W
REPEATIBILITY
DESCRIPTION
The SuperM ESH™ series is obtained through an
extreme optimization of S T’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
3
2
TO-220
1
TO-220FP
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LI GHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP8NK80Z P8NK80Z TO-220 TUBE
STP8NK80ZFP P8NK80ZFP TO-220FP TUBE
STW8NK80Z W8NK80Z TO-247 TUBE
1/11February 2003
STP8NK80Z - STP8NK80ZFP - STW8NK80Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP8NK80Z - STW8NK80Z STP8NK80ZFP
V
V
DGR
V
I
I
IDM()
P
TOT
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
T
T
() Pulse width limited by safe operating area
(1) I
SD
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS=0)
DS
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
GS
Drain Current (continuous) at TC= 25°C
D
Drain Current (continuous) at TC= 100°C
D
6.2 6.2 (*) A
3.9 3.9 (*) A
800 V
800 V
Drain Current (pulsed) 24.8 24.8 (*) A
Total Dissipation at TC= 25°C
140 30 W
Derating Factor 1.12 0.24 W/°C
Gate source ESD(HBM-C=100pF, R=1.5 KΩ) 4000 V
Insulation Withstand Voltage (DC) - 2500 V
ISO
Operating Junction Temperature
j
Storage Temperature
stg
≤6.2A, di/dt ≤200 A/µs,VDD≤ V
(BR)DSS,Tj≤TJMAX.
-55to150 °C
THERMAL DATA
TO-220 TO-220FP TO-247
Rthj-case Thermal Resistance Junction-case Max 0.89 4.2 0.89 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50
T
Maximum Lead Temperature For Soldering Purpose 300 °C
l
°C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25°C, ID=IAR,VDD=50V)
j
max)
j
6.2 A
300 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
Gate-Source Breakdown Voltage
GSO
Igs=± 1 mA (Open Drain) 30 V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD capability, but also to make them s a fely absorb possible volt age trans ients tha t may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integ rated Zener diodes thus avoid the
usage of external components.
2/11
STP8NK80Z - STP8NK 80ZFP - STW8NK80Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SP ECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS= 0 800 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100 µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 3.1 A 1.3 1.5 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 3.1 A 5.2 S
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 1320
V
DS
143
27
VGS=0,VDS= 640 V 58 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=400V,ID= 3.1 A
RG= 4.7Ω,VGS=10V
(Resistive Load see, Figure 3)
=640V,ID= 6.2 A,
V
DD
V
=10V
GS
17
30
46
8.5
25
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 400 V, ID= 3.1 A
R
=4.7ΩVGS=10V
G
48
28
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
c
= 640V, ID= 6.2 A,
Off-voltage Rise Time
f
Fall Time
Cross-over Time
V
DD
RG=4.7Ω, VGS=10V
(Inductive Load see, Figure 5)
9
9
18
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD= 6.2 A, VGS=0
I
SD
VDD=50V,Tj= 150°C
(see test circuit, Figure 5)
= 6.2 A, di/dt = 100 A/µs
460
2990
13
when VDSincreases from 0 to 80%
oss
6.2
24.8
1.6 V
ns
ns
ns
ns
ns
A
A
ns
nC
A
3/11
STP8NK80Z - STP8NK80ZFP - STW8NK80Z
Safe Operating Area For TO-220
Thermal Impedance For TO-220
Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP
4/11
Thermal Impedance For TO-247Safe Operating Area For TO-247
Loading...