SGS Thomson Microelectronics STP80NF10 Datasheet
N - CHANNEL 100V- 0.014Ω - 80A TO-220
LOW GATE CHARGE STripFET POWER MOSFET
TYPE V
DSS
ST P80NF10 100 V < 0.0 18 Ω 80 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
= 0.014 Ω
CHARACTERIZATION
R
DS(on)
I
STP80NF10
PRELIMINARY DATA
D
DESCRIPTION
This MOSFET series realized with
3
2
1
STMicroelectronicsunique STripFET process has
specifically been designed to minimize input
TO-220
capacitance and gate charge. It is therefore
suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applicationswith low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCYDC-DC CONVERTERS
■ UPSAND MOTORCONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
dv/ dt (
E
AS
T
(•) Pulse widthlimited by safe operating area (2) startingTj = 25oC, ID=80A, VDD=50V (1)ISD
April 2000
Dra in- sour c e Volta ge (VGS= 0) 100 V
DS
Drain- gate Voltage (RGS=20kΩ) 100 V
DGR
Gate-s ource Voltage ± 20 V
GS
Dra in Cu rr ent (cont inuous) at Tc=25oC80A
I
D
Dra in Cu rr ent (cont inuous) at Tc= 100oC50A
I
D
(•) Dra in Cu rr ent (pulsed) 320 A
Tot al Dissipation at Tc=25oC 210 W
tot
Der ati ng F a c tor 1.4 W/
1 ) Peak Diode R ecovery volt a ge slope 9 V/ ns
(2) Single Pulse Av alan c he En er gy 245 mJ
St orage T emperat ur e -65 to 175
stg
Max. Operating Jun c t ion Tem pe ra tur e 175
T
j
≤ 68 A,di/dt ≤ 300A/ms, VDD
≤V
(BR)DSS
,Tj≤T
JMA
o
C
o
C
o
C
1/6
STP80NF10
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Tempe ra t ure For Solder ing Purpose
l
0.71
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain-s ource On
VGS=10V ID= 40 A 0.014 0. 01 8 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
80 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t anc e
iss
Out put Capac it ance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=40 A 20 S
VDS=25V f=1MHz VGS= 0 4300
600
240
µA
µ
pF
pF
pF
A
2/6
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