SGS Thomson Microelectronics STP80NF03L-04 Datasheet
STP80NF03L-04
N-CHANNEL 30V - 0.0034
TYPE V
DSS
ST P80NF03L- 04 30 V < 0. 004 Ω 80 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE 100
■ APPLICATIONORIENTED
DS(on)
= 0.0034 Ω
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGHSPEED SWITCHING
■ SOLENOIDAND RELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc. )
o
R
C
DS(on)
I
D
Ω
- 80A TO-220
STripFET POWER MOSFET
PRELIMINARY DATA
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
D
I
DM
P
E
AS
T
(•) Pulsewidth limited by safe operating area (••) Current limited by package (1) starting Tj
November 1999
Dra in- sour c e Voltage (VGS=0) 30 V
DS
Drain- gate Voltage (RGS=20kΩ)30V
DGR
Gate-s ource Voltage ± 20 V
GS
(••) Dra in Curr ent (c ont i nuous) at Tc=25oC80A
Dra in Curr ent (c ont i nuous) at Tc= 100oC56A
I
D
(
Dra in Curr ent (puls e d) 320 A
•)
Tot al Dissipatio n a t Tc=25oC 210 W
tot
Der ati ng Fa ct or 1.43 W/
o
C
(1) Single Pulse Avalanche En er gy 2 J
St orage T e m pe ra t ure -65 to 175
stg
Max. Oper at ing Junct ion Temperat ur e 175
T
j
=25oC,ID=40A , VDD=15V
o
C
o
C
1/6
STP80NF03L-04
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperat ur e For S o ldering Pur p os e
l
0.7
62.5
0.5
300
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y L eak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A11.72.5V
Sta t ic Drain -s ource O n
Resistance
VGS=10V ID=40A
=4.5V ID=40A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
0.0034
0.0042
80 A
0.004
0.0055ΩΩ
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input C apaci t anc e
iss
Out put Capacit anc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=15 A 50 S
VDS=25V f=1MHz VGS= 0 7000
1700
600
µ
µA
pF
pF
pF
A
2/6
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