SGS Thomson Microelectronics STP80NF03L Datasheet
STP70NF03L
N-CHANNEL 30V - 0.008
Ω
- 70A TO-220
LOW GATE CHARGE STripFET POWER MOSFET
PRELIMINARY DATA
■ TYPICALR
DS(on)
= 0.008 Ω
■ TYPICALQ
g
= 35 nC @ 10V
■ OPTIMAL R
DS(on)xQg
TRADE-OFF
■ CONDUCTIONLOSSESREDUCED
■ SWITCHINGLOSSESREDUCED
DESCRIPTION
This applicationspecific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboardswhere fast switching and high efficiencyare of paramount importance.
APPLICATIONS
■ SPECIFICALLYDESIGNED AND
OPTIMISEDFOR HIGH EFFICIENCYCPU
CORE DC/DC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Dra in- sour c e Volt age (VGS=0) 30 V
V
DGR
Dra in- gate V ol t age ( RGS=20kΩ)30V
V
GS
Gat e-source Voltage
±
20 V
I
D
Dra in C u rr ent (c ontinuous) a t Tc=25oC70A
I
D
Dra in C u rr ent (c ontinuous) a t Tc=100oC50A
I
DM
(•) Drain Cu rrent (p ulsed) 280 A
P
tot
Tot al Dissipation at Tc=25oC 100 W
Der ati ng Fac t or 0.67 W/
o
C
T
stg
St orage Temperature -65 t o 175
o
C
T
j
Max. O perating Junction T emper at ure 175
o
C
(•) Pulse width limited by safeoperating area
TYPE V
DSS
R
DS(on)
I
D
ST P70NF03L 30 V < 0. 01 Ω 70 A
1
2
3
TO-220
1/6
THERMAL DATA
R
thj-case
R
thj-amb
T
l
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Te m pe ra tur e For So lder ing Purpose
1.5
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
(T
case
=25oC unless otherwisespecified)
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Break dow n V o lt age
ID=250µAVGS=0 30 V
I
DSS
Zero Gate Voltage
Drain Cur re nt ( V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc=125oC
1
10
µA
µ
A
I
GSS
Gat e- bod y L eakage
Current (V
DS
=0)
V
GS
= ± 20 V ± 100 nA
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID= 250 µA12.5V
R
DS(on)
Sta t ic Drain -s ource On
Resistance
VGS=10V ID=35A
V
GS
=4.5V ID=35A
0.008
0.011
0.01
0.014
Ω
Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)ma x
VGS=10V
70 A
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansc on duc tance
VDS>I
D(on)xRDS(on)ma xID
=35 A 40 S
C
iss
C
oss
C
rss
Input Capac i t ance
Out put Capacitanc e
Reverse Tr ansfer
Capacit a nc e
VDS=25V f=1MHz VGS= 0 1650
800
170
pF
pF
pF
STP70NF03L
2/6
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