SGS Thomson Microelectronics STP80NE06-10 Datasheet
STP80NE06-10
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STP80 NE 0 6- 1 0 60 V <0. 01 Ω 80 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
=0.0085 Ω
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latestdevelopmentof
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkablemanufacturingreproducibility.
APPLICATIONS
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DCCONVERTERS
■ AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/ dt Peak Diode Recov ery vo lt age sl ope 7 V/ns
T
(•) Pulsewidth limitedby safe operating area (1)ISD≤ 80 A,di/dt ≤ 300 A/µs, VDD≤ V
February 1998
Drain-source Voltage (VGS=0) 60 V
DS
Drain- gate Voltage (RGS=20kΩ)
DGR
Gat e- source Volt age ± 20 V
GS
I
Drain Current (c on t in uous) at Tc=25oC80A
D
I
Drain Current (c on t in uous) at Tc=100oC57A
D
60 V
(•) Drain Current (pul sed) 320 A
Tot al Dissip at i on at Tc=25oC150W
tot
Derat in g F actor 1 W/
Sto rage Temperature -65 to 175
stg
T
Max. Oper at in g Junc t io n Temperature 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STP80NE06-10
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Valu e Unit
I
AR
E
Ther mal Resistan ce J unction-c a s e Max
Ther mal Resistan ce J unction-ambient Max
Ther mal Resistan ce Cas e - sink Ty p
Maximum Lead T e mperat u re For Solderi ng P ur p ose
l
Avalanche Curre nt , Rep et it i v e or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=30V)
j
max, δ <1%)
j
1
62.5
0.5
300
80 A
250 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
60 V
Breakdown Voltage
I
DSS
I
GSS
Zer o Gate V o lt age
Drain Cur re nt (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125
DS
o
C
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID=40A 8.5 10 mΩ
Resistance
I
D(on)
On State Drain Cu r rent VDS>I
D(on)xRDS(on)max
80 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capaci t ance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=40 A 19 3 8 S
VDS=25V f=1MHz VGS= 0 7600
890
150
10000
1100
200
µA
µA
pF
pF
pF
2/8
STP80NE06-10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Tim e
VDD=30V ID=40A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sourc e Charge
gs
Gate-Drain Charge
gd
VDD=48V ID=80A VGS= 10 V 140
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
Of f - voltage Rise Time
t
Fall Time
f
Cross-over Time
c
VDD=48V ID=40A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward On Voltage ISD=80A VGS=0 1.5 V
Reverse Recover y
rr
Time
Reverse Recover y
rr
= 80 A di/ dt = 100 A/µs
I
SD
=30V Tj=150oC
V
DD
(see test circuit, figure 5)
Charge
Reverse Recover y
Current
50
15065200
20
50
45
75
130
60
100
170
80
320
100
0.4
8
ns
ns
nC
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Areafor ThermalImpedance
3/8
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