SGS Thomson Microelectronics STP80NE03L Datasheet
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE V
DSS
STP80NE03L-06 30 V < 0.006 Ω 80 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE 100
■ APPLICATIONORIENTED
DS(on)
=0.005 Ω
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGHSPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc. )
o
R
C
DS(on)
I
D
STP80NE03L-06
PRELIMINARY DATA
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/ dt Peak Diode Recov ery vo lt age sl ope 7 V/ns
T
(•) Pulsewidth limitedby safe operating area (1)ISD≤ 80 A,di/dt ≤ 300 A/µs, VDD≤ V
December 1997
Drain-source Voltage (VGS=0) 30 V
DS
Drain- gate Voltage (RGS=20kΩ)
DGR
Gat e- source Volt age ± 15 V
GS
I
Drain Current (c on t in uous) at Tc=25oC80A
D
I
Drain Current (c on t in uous) at Tc=100oC60A
D
30 V
(•) Drain Current (pulsed) 320 A
Tot al Dissip at i on at Tc=25oC150W
tot
Derat in g F actor 1 W/
Sto rage Temperature -65 to 175
stg
T
Max. Oper at in g Junc t io n Temperature 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/6
STP80NE03L-06
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lu e Uni t
I
AR
E
Ther mal Resist an c e Junct io n- ca s e Max
Ther mal Resist an c e Junct io n- ambient Max
Ther mal Resist an c e Case-sink Ty p
Maximum Lead T emperature Fo r S oldering Purpose
l
Avalanche Curre nt , Rep et it i v e or Not- Re petitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=15V)
j
max, δ <1%)
j
1
62.5
0.5
300
80 A
600 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond ition s Min. Typ. Max. Un it
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
30 V
Breakdown Voltage
I
DSS
I
GSS
Zer o Gate Vo lt age
Drain Cur re nt (V
GS
Gat e-body Le akage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 15 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond ition s Min. Typ. Max. Un it
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
11.72.5V
Voltage
R
DS(on)
I
D(on)
Stati c D rain-source On
Resistance
VGS=10V ID=40A
=5V ID=40A
V
GS
On St at e D rain Cu r rent VDS>I
D(on)xRDS(on)max
0.005 0. 006
0.009
80 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond ition s Min. Typ. Max. Un it
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capaci t ance
iss
Out put C apa citance
oss
Reverse T rans fer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=40 A 30 50 S
VDS=25V f=1MHz VGS= 0 6500
1500
500
8700
2000
700
µA
µA
Ω
pF
pF
pF
2/6
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