SGS Thomson Microelectronics STP80N0509 Datasheet
STP80N05-09
N - CHANNEL ENHANCEMENT MODE
”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
■ ULTRA HIGHDENSITY TECHNOLOGY
■ TYPICAL R
DS(on)
=7mΩ
■ AVALANCHE RUGGED TECHNOLOGY
■ LOW GATECHARGE
■ HIGH CURRENT CAPABILITY
■ 175
o
C OPERATING TEMPERATURE
APPLICATIONS
■ SYNCROUNOUS RECTIFIERS
■ HIGH CURRENT, HIGHSPEED SWITCHING
■ DC-DC &DC-AC CONVERTER ABSOLUTE
MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
March1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS=0) 50 V
V
DGR
Drain- gate Voltage (RGS=20kΩ)50V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at Tc=25oC80A
I
D
Drain Current (continuous) at Tc=100oC60A
I
DM
(•) Drain Current (pulsed) 320 A
P
tot
Total Dissipation at Tc=25oC 150 W
Derating Factor 1 W/oC
dV/dt(1) Peak Diode Recovery voltageslope 5 V/ns
T
stg
Storage Temperature -65 t o 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
(•) Pulse width limited bysafe operatingarea (1)ISD≤ 60 A,di/dt≤ 200 A/ms,VDD≤ V
(BR)DSS,TJ≤TJMAX
TYPE V
DSS
R
DS(on)
I
D
STP80N05-09 50 V < 0.009 Ω 80 A
1
2
3
TO-220
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THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax,δ <1%)
60 A
E
AS
Single Pulse AvalancheEnergy
(starting Tj=25oC, ID=IAR,VDD=25V)
600 mJ
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID=250µAVGS= 0 50 V
I
DSS
Zero Gate Voltage
Drain Current (VGS=0)
VDS=MaxRating
VDS= Max Rating Tc=125oC
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (VDS=0)
VGS=± 20 V ± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA234V
R
DS(on)
Static Drain-source On
Resistance
VGS= 10V ID=40A 0.007 0.009 Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
80 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs(∗) Forward
Transconductance
VDS>I
D(on)xRDS(on)maxID
= 40 A 25 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS=0 5900
900
230
pF
pF
pF
STP80N05-09
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise T ime
VDD=30V ID=40A
RG=4.7 Ω VGS=10V
(see test circuit, figure 3)
32
16042200
ns
ns
(di/dt)onTurn-on Current Slop e VDD=48V ID=80A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
240 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=40V ID=80A VGS= 10 V 230
30
60
280 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Ti me
Cross-over Time
VDD=48V ID=40A
RG=4.7 Ω VGS=10V
(see test circuit, figure 5)
35
175
240
46
230
300
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
80
320
A
A
VSD(∗) Forward On Voltage ISD=80A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
ReverseRecovery
Time
ReverseRecovery
Charge
ReverseRecovery
Current
ISD= 80 A di/dt = 100 A/µs
VR=30V Tj=150oC
(see test circuit, figure 5)
125
0.6
10
ns
µC
A
(∗) Pulsed: Pulseduration =300 µs, duty cycle 1.5%
(•) Pulse widthlimitedby safe operatingarea
Safe Operating Area Thermal Impedance
STP80N05-09
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