SGS Thomson Microelectronics STP80N03L-06 Datasheet
STP80N03L-06
N - CHANNEL ENHANCEMENT MODE
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
TENTATIVE DATA
■ TYPICAL R
DS(on)
= 0.005 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
o
C
■ HIGH CURRENT CAPABILITY
■ 175
o
C OPERATING TEMPERATURE
■ HIGH dV/dt RUGGED NES S
■ APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ POWER MOTOR CONTROL
■ DC-DC & DC-AC CONVERT E RS
■ SYNCRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0) 30 V
V
DGR
Drain- gate Voltage (RGS = 20 kΩ)30V
V
GS
Gate-source Voltage ± 15 V
I
D
Drain Current (continuous) at Tc = 25 oC80A
I
D
Drain Current (continuous) at Tc = 100 oC60A
I
DM
(•) Drain Current (pulsed) 320 A
P
tot
Total Dissipation at Tc = 25 oC 150 W
Derating Factor 1 W/
o
C
dV/dt(
1) Peak Diode Recovery voltage slope 5 V/ns
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
(•) Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STP80N03L-06 30 V < 0.006 Ω 80 A (*)
March 1996
TO-220
1
2
3
1/5
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max, δ < 1%)
60 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 oC, ID = IAR, V
DD
= 25 V)
600 mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max, δ < 1%)
150 mJ
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100 oC, pulse width limited by Tj max, δ < 1%)
60 A
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA V
GS
= 0 30 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 Tc = 125 oC
250
1000µAµA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 15 V ± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage V
DS
= VGS ID = 250 µA 1 2.5 V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10V ID = 40 A
V
GS
= 10V ID = 40 A Tc = 100oC
V
GS
= 5V ID = 40 A
V
GS
= 5V ID = 40 A Tc = 100oC
0.005
0.006
0.006
0.012
0.009
0.018
Ω
Ω
Ω
Ω
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max
V
GS
= 10 V
80 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
VDS > I
D(on)
x R
DS(on)max
ID = 10 A 35 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0 6000
1000
250
pF
pF
pF
STP80N03L-06
2/5
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