SGS Thomson Microelectronics STP7NC80ZFP, STP7NC80Z, STB7NC80ZT4, STB7NC80Z-1, STB7NC80Z Datasheet
1/13May 2003
STP7NC80Z - STP7NC80ZFP
STB7NC80Z - STB7NC80Z-1
N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET
■ TYPICAL R
DS
(on) = 1.3Ω
■ EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ V ER Y LOW GATE INPUT RE SISTANCE
■ GAT E CHARGE MINIMIZED
DESCRIPTION
The t hird generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed on-resistance per unitarea while in tegrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as reques ted by a large v ariety of single-switch applications.
APPLICATIONS
■ S INGLE -ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
STP7NC80Z
STP7NC80ZFP
STB7NC80Z
STB7NC80Z-1
800 V
800 V
800 V
800 V
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
6.5 A
6.5 A
6.5 A
6.5 A
SALES TYPE MARKING PACKAGE PACKAGING
STP7NC80Z P7NC80Z TO-220 TUBE
STP7NC80ZFP P7NC80ZFP TO-220FP TUBE
STB7NC80ZT4 B7NC80Z
D
2
PAK
TAPE&REEL
STB7NC80Z-1 B7NC80Z
I
2
PAK
TUBE
TO-220 TO-220FP
1
2
3
I2PAK
(Tabless TO-220)
1
2
3
1
3
D2PAK
INTERNAL SCHEMATIC DIAGRAM
STP7NC80Z - STP7NC80ZF P - STB7NC80Z - STB 7NC80Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes hav e s pec if ically been des igned to enhance not only the dev ice’s
ESD capability, but also to make them safely absorb possibl e voltage transients tha t may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
STP7NC80Z
STB7NC80Z
STB7NC80Z-1
STP7NC80ZFP
V
DS
Drain-source Voltage (VGS=0)
800 V
V
DGR
Drain-gate Voltage (RGS=20kΩ)
800 V
V
GS
Gate- source Voltage ±25 V
I
D
Drain Current (continuous) at TC= 25°C
6.5 6.5 (*) A
I
D
Drain Current (continuous) at TC= 100°C
4 4(*) A
IDM()
Drain Current (pulsed) 26 26 (*) A
P
TOT
Total Dissipation at TC= 25°C
135 40 W
Derating Factor 1.08 0.32 W/°C
I
GS
Gate-source Current ±50 mA
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3KV
dv/dt Peak Diode Recovery voltage slope 3 V/ns
V
ISO
Insulation Withstand Voltage (DC) -- 2000 V
T
stg
Storage Temperature -65 to 150 °C
T
j
Max.Operating Junction Temperature 150 °C
TO-220 / D
2
PAK /
I
2
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 0.93 3.13 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
6.5 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID=IAR,VDD=50V)
290 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 25 V
αT Voltage Thermal Coefficient T=25°C Note(3)
1.3
10
-4
/°C
Rz Dynamic Resistance
I
D
=20mA,
90 Ω
3/13
STP7NC80Z - STP7NC 80Z FP - STB7NC80Z - STB7NC80Z-1
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V
BV
=αT(25°-T) BV
GSO
(25°)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID= 250 µA, VGS= 0 800 V
∆BV
DSS
/∆TJBreakdown Voltage Temp.
Coefficient
ID=1mA,VGS= 0 0.9 V/°C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
V
DS
= Max Rating, TC= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID
= 250µA
345V
R
DS(on)
Static Drain-source On
Resistance
VGS=10V,ID= 3.3 A 1.3 1.5 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS>I
D(on)xRDS(on)max,
ID= 3.3 A
6S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V,f=1MHz,VGS= 0 2350
164
17
pF
pF
pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VDD=400V,ID=3A
R
G
= 4.7Ω VGS=10V
( see test circuit, Figure 3)
33
12
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=640V,ID=6A,
VGS=10V
43
12
15
58
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V, ID=6 A,
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)
13
13
20
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
6.5
26
A
A
V
SD
(1)
Forward On Voltage
ISD=6.1 A, VGS=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 6 A, di/dt = 100A/µs
VDD=40V,Tj= 150°C
(see test circuit, Figure 5)
680
6
18
ns
µC
A
STP7NC80Z - STP7NC80ZF P - STB7NC80Z - STB 7NC80Z-1
4/13
Output Characteristics
Transfer Characteristics
Safe Operating Area For T O-220FP
Safe Operating Area For TO-220/I 2PAK Thermal Impedance For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
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