SGS Thomson Microelectronics STP7NC70Z, STP7NC70ZFP, STB7NC70Z-1, STB7NC70Z, STB7NC70ZT4 Datasheet
1/13May 2003
STP7NC70Z - STP7NC70ZFP
STB7NC70Z - STB7NC70Z-1
N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET
■ TYPICAL R
DS
(on) = 1.1Ω
■ EXTREMELYHIGHdv/dtAND CAPABILITYGATE
TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TE S TED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety
of single-switch applications .
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STP7NC70Z/FP 700V < 1.38Ω 6A
STB7NC70Z/-1 700V < 1.38Ω 6A
Symbol Parameter Value Unit
STP(B)7NC70Z(-1) STP7NC70ZFP
V
DS
Drain-source Voltage (VGS=0)
700 V
V
DGR
Drain-gate Voltage (RGS=20kΩ)
700 V
V
GS
Gate- source Voltage ± 25 V
I
D
Drain Current (continuous) at TC= 25°C
6 6(*) A
I
D
Drain Current (continuous) at TC= 100°C
3.7 3.7(*) A
I
DM
(1)
Drain Current (pulsed) 24 24 A
P
TOT
Total Dissipation at TC= 25°C
125 40 W
Derating Factor 1 0.32 W/°C
I
GS
Gate-source Current ±50 mA
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV
dv/dt Peak Diode Recovery voltage slope 3 V/ns
V
ISO
Insulation Withstand Voltage (DC) -- 2000 V
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
(1)ISD≤6A, di/dt≤100A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
(2).Limited only by maximum temperature allowed
TO-220
1
2
3
TO-220FP
1
2
3
I2PAK
(Tabless TO-220)
1
3
D2PAK
STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1
2/13
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220 / D2PAK /
I
2
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
6A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID=IAR,VDD=50V)
238 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID= 250 µA, VGS= 0 700 V
∆BV
DSS
/∆TJBreakdown Voltage Temp.
Coefficient
ID=1mA,VGS= 0 0.8 V/°C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, TC= 125 °C
50 µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ±20V ±10 µA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID
= 250µA
345V
R
DS(on)
Static Drain-source On
Resistance
VGS=10V,ID= 3.5 A
1.1 1.38 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1)
Forward Transconductance
V
DS>ID(on)xRDS(on)max,
ID= 3.5A
7S
C
iss
Input Capacitance
V
DS
=25V,f=1MHz,VGS=0
1840 pF
C
oss
Output Capacitance 140 pF
C
rss
Reverse Transfer
Capacitance
18 pF
3/13
STP7NC70Z - STP7NC70Z FP - STB7NC70Z - STB7NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V
BV
= αT(25°-T)BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The bui lt-in back-to-back Zener diodes have specificall y been designed to enhanc e not only the device’ s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
Rise Time
VDD=350V,ID= 3.5 A
R
G
= 4.7Ω VGS=10V
(see test circuit, Figure 3)
24 ns
t
r
8ns
Q
g
Total Gate Charge
V
DD
=560V,ID= 7A,
V
GS
=10V
47 66 nC
Q
gs
Gate-Source Charge 11 nC
Q
gd
Gate-Drain Charge 19 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 560V, ID=7A,
R
G
=4.7Ω, VGS= 10V
(see test circuit, Figure 5)
11 ns
t
f
Fall Time 10 ns
t
c
Cross-over Time 19 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 6 A
I
SDM
(2)
Source-drain Current (pulsed) 24 A
VSD(1)
Forward On Voltage
ISD= 6 A, VGS=0
1.6 V
t
rr
Reverse Recovery Time
I
SD
= 7A, di/dt = 100A/µs,
V
DD
=50V,Tj= 150°C
(see test circuit, Figure 5)
575 ns
Q
rr
Reverse Recovery Charge 5.8 µC
I
RRM
Reverse Recovery Current 20 A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 25 V
αT Voltage Thermal Coefficient T=25°C Note(3) 1.3
10
-4
/°C
Rz Dynamic Resistance
I
D
=50mA,VGS=0
90 Ω
STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1
4/13
Transfer Characteristics
Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Output Characteristics
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