SGS Thomson Microelectronics STP7NB80FP, STP7NB80 Datasheet

STP7NB80



N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP

TYPE V

STP7NB80 STP7NB80 FP

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

800 V 800 V

= 1.2

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Ω

R

DS(on)

<1.5Ω <1.5

Ω

I

D

6.5 A

STP7NB80FP

PowerMESH MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGHSPEEDSWITCHING

■ SWITCHMODE POWER SUPPLIES(SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTORDRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P7 NB80 STP 7NB 80FP

V

I

DM

P

dv/ dt(

V

T

(•) Pulsewidth limited by safe operatingarea (1)ISD≤ 6.5A, di/dt ≤ 200 A/µs,VDD≤ V

*) Limitedonly maximumtemperature allowed

(

April 1999

Drain-sour ce Voltage (VGS=0) 800 V

DS

Drain- ga t e V olt a ge (RGS=20kΩ)

DGR

Gate-sourc e Voltage ± 30 V

GS

Drain C ur r ent (c on t in uous) at Tc=25oC6.56.5(*)A

I

D

Drain C ur r ent (c on t in uous) at Tc= 100oC4.14.1(*)A

I

D

800 V

(•) Drain C ur r ent (pulsed) 26 26 A

Total Dissipation at Tc=25oC 135 40 W

tot

Derating F actor 1.08 0.32 W/

1) Peak Diode Rec o very volt ag e slope 4.5 4.5 V/ns

Ins ulation W i th s tand Voltag e (DC) -- 2000

ISO

Sto rage T e m pe r ature -65 to 1 50

stg

Max. O pe rating Junction T em p er a t ure 150

T

j

(BR)DSS

,Tj≤T

JMAX

o

C

o

C

o

C

o

C

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STP7NB80/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max Val ue Uni t

I

AR

E

Ther mal Resis t an ce Junc ti on-cas e Max 0.92 3.13 Ther mal Resis t an ce Junc ti on-ambien t Ma x

Thermal Resistance Case-sink Typ Maximum Le ad Temper at u r e For Sold er ing Purpos e

l

Avalanche Cu r rent, Repetitive or No t- Re petitiv e (pulse width limite d by T

Single Pu lse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

6.5 A

400 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

800 V

Break d own Voltage

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gat e- b ody Leakage Current (V

DS

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

=± 30 V

V

GS

1

50

± 100 nA

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250µA

345V

Voltage

R

DS(on)

Static Drain-source O n

VGS=10V ID= 3.2 A 1.2 1.5 Ω

Resistanc e

I

D(on)

On State Drain Cu r rent VDS>I

D(on)xRDS(on)max

6.5 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconduc tance

C

Input Capacit ance

iss

Out put Ca pacita nce

oss

Reverse T ransfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=3.2A 1.5 6.5 S

VDS=25V f=1MHz VGS= 0 1400

180

20

µ µA

pF pF pF

A

2/9

STP7NB80/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Time

t

r

Rise Tim e

VDD= 400 V ID=3.5A

=4.7 Ω VGS=10V

R

G

20 10

(see t est circuit, fi gure 3)

Q Q Q

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Ch arge

gd

VDD= 640 V ID=7A VGS=10V

=4.7 Ω

R

G

40 10 18

52 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time Fall Time

f

Cross-ov er T ime

c

VDD= 640 V ID=7A

=4.7 Ω VGS=10V

R

G

(see t est circuit, fi gure 5)

15 15 25

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operatingarea

Source-drain C urrent

(•)

Source-drain C urrent

6.5 26

(pulsed)

(∗) Forwar d O n V oltage ISD=6.5A VGS=0 1.6 V

Reverse Recover y

rr

Time Reverse Recover y

rr

= 7 A di/d t = 100 A/µs

I

SD

= 100 V Tj=150oC

V

DD

(see t est circuit, fi gure 5)

750

7.10 Charge Reverse Recover y

19

Current

ns ns

nC nC

ns ns ns

A A

ns

µ

A

C

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9