SGS Thomson Microelectronics STP7NB60KD Datasheet
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ADVANCED DATA
June 2002
STGP7NB60KD STGB7NB60KD
STGP7NB60KDFP
N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK
PowerMESH™ IGBT
■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (V
cesat
)
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ VERY HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
■ CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH
™
IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control app lications with short circuit withstand capability.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
(n) Puls e width limited by s afe operating ar ea
TYPE V
CES
V
CE(sat)
I
C
STGP7NB60KD
STGP7NB60KDFP
STGB7NB60KD
600 V
600 V
600 V
< 2.8 V
< 2.8 V
< 2.8 V
7 A
7 A
7 A
Symbol Parameter Value Unit
STGP7NB60KD
STGB7NB60KD
STGP7NB60KDFP
V
CES
Collector-Emitter Voltage (VGS = 0)
600 V
V
ECR
Emitter-Collector Voltage 20 V
V
GE
Gate-Emitter Voltage ±20 V
I
C
Collector Current (continuos) at TC = 25°C
14 A
I
C
Collector Current (continuos) at TC = 125°C
7A
I
CM
(n)
Collector Current (pulsed) 56 A
P
TOT
Total Dissipation at TC = 25°C
80 35 W
Derating Factor 0.64 0.28 W/°C
V
ISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) -- 2500 V
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
TO-220
1
2
3
1
2
3
TO-220FP
1
3
D2PAK
INTERNAL SCHEMATIC DIAGRAM
STGP7NB60KD/FP/STGB7NB 60K D
2/9
THERMA L D ATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
SWITCHING ON
TO-220
D
2
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.56 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0 600 V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, TC = 25 °C 50 µA
VCE = Max Rating, TC = 125 °C 500 µA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ±20V , VCE = 0 ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= VGE, IC = 250µA
57V
V
CE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 7 A
2.3 2.8 V
VGE = 15V, IC = 7 A, Tc =100°C
1.9 V
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward Transconductance
V
CE
= 25 V , IC=7 A
5S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, VGE = 0
560 pF
C
oes
Output Capacitance 68 pF
C
res
Reverse Transfer
Capacitance
15 pF
Q
g
Total Gate Charge
V
CE
= 480V, IC = 7 A,
VGE = 15V
42 nC
Q
ge
Gate-Emitter Charge 7.9 nC
Q
gc
Gate-Collector Charge 17.6 nC
tscw Short Circuit Withstand Time V
ce
= 0.5 V
BR(CES)
,
VGE = 15 V,
Tj = 125°C , RG = 10 Ω
10 µs
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
CC
= 480 V, IC = 7 A
RG=10Ω, VGE = 15 V
15 ns
t
r
Rise Time 48 ns
(di/dt)
on
Turn-on Current Slope VCC= 480 V, IC = 7 A RG=10Ω
VGE = 15 V,Tj = 125°C
160 A/µs
Eon Turn-on Switching Losses 70 µJ
3/9
STGP7NB60KD/FP/STGB7NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
COLLECTOR-EMITTER DIODE
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by max. j unction temperature .
(**)Losses in clude Also th e T ai l (Jedec Standardization)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
Cross-over Time
V
cc
= 480 V, IC = 7 A,
R
GE
= 10 Ω , VGE = 15 V
85 ns
t
r(Voff
)
Off Voltage Rise Time 20 ns
td(
off
)
Delay Time 75 ns
t
f
Fall Time 70 ns
E
off
(**)
Turn-off Switching Loss 85
µJ
E
ts
Total Switching Loss 235
µJ
t
c
Cross-over Time
V
cc
= 480 V, IC = 7 A,
R
GE
= 10 Ω , VGE = 15 V
Tj = 125 °C
150 ns
t
r(Voff
)
Off Voltage Rise Time 50 ns
td(
off
)
Delay Time 110 ns
t
f
Fall Time 110 ns
E
off
(**)
Turn-off Switching Loss 220
µJ
E
ts
Total Switching Loss 405
µJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
Forward Current
Forward Current pulsed
6
48
A
A
V
f
Forward On-Voltage If = 6 A
If = 6 A, Tj = 125 °C
1.8
1.4
2.2
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 6 A ,VR = 200 V,
Tj =125°C, di/dt = 100A/µs
100
135
2.7
ns
nC
A
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