SGS Thomson Microelectronics STP7NA40FI, STP7NA40 Datasheet
STP7NA40
STP7NA40FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 0.82 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
DS(on)
and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STP 7NA40
STP 7NA40FI
400 V
400 V
<1Ω
<1Ω
6.5 A
4.1 A
1
2
3
TO-220 ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
ST P7NA40 ST P7NA40FI
V
DS
Drain - s ource Voltage (VGS=0) 400 V
V
DGR
Drain - gat e Voltage (RGS=20kΩ)400V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (continuous) at Tc=25oC6.54.1A
I
D
Drain Current (continuous) at Tc=100oC4.1 2.6A
I
DM
(•) Drain Current (pulsed) 26 26 A
P
tot
Total Di ssipation at Tc=25oC 100 40 W
Derat ing Factor 0.8 0.32 W/
o
C
V
ISO
Ins ulation Withs t and Voltage (DC) 2000 V
T
stg
St or a ge Tem perature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulsewidth limited bysafe operating area
1
2
3
1/10
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
Thermal Resistance J unction- c ase Max 1.25 3.12
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junc tion-am bie nt Max
Thermal Resistance Cas e-sink Typ
Maximum Lead T emperature For Solder in g Purp os e
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
6.5 A
E
AS
Single Pul se Avalanche Ener gy
(starti ng T
j
=25oC, ID=IAR,VDD=50V)
210 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
8.4 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
4.1 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS= 0 400 V
I
DSS
Zer o Gate Volt age
Drain Current (VGS=0)
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
25
250
µA
µA
I
GSS
Gat e- body Leak age
Current (V
DS
=0)
V
GS
= ± 30 V ± 100 nA
ON (∗)
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
R
DS(on)
St at ic Drain-s our ce O n
Resistance
VGS=10V ID=3.5A 0.82 1 Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
6.5 A
DYNAMIC
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=3.5A 3.1 4.6 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS=0 700
120
31
900
160
43
pF
pF
pF
STP7NA40/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on T im e
Rise Time
VDD=200V ID=3.5A
RG=47 Ω VGS=10V
(see test circuit, figure 3)
25
75
35
100
ns
ns
(di/dt)
on
Turn-on C urrent S lope VDD=320V ID=7A
RG=47 Ω VGS=10V
(see test circuit, figure 5)
220 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD= 320 V ID=7A VGS=10V 34
7
15
45 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
t
r(Voff)
t
f
t
c
Off -voltage R ise Time
Fall Time
Cross-over Time
VDD=320V ID=7A
RG=47 Ω VGS=10V
(see test circuit, figure 5)
40
25
75
55
35
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
6.5
26
A
A
V
SD
(∗) F or w ar d On Voltage ISD=6.5A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=7A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
380
4.8
25
ns
µC
A
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
STP7NA40/FI
3/10
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