SGS Thomson Microelectronics STP75NE75FP, STP75NE75 Datasheet
STP75NE75
STP75NE75FP
N - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FP
STripFET POWER MOSFET
■ TYPICALR
DS(on)
= 0.01 Ω
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latestdevelopmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resultingtransi-
stor shows extremely high packingdensityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ SOLENOIDAND RELAY DRIVERS
■ DC MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DCCONVERTERS
■ AUTOMOTIVEENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST P75NE75 S TP 75 NE 7 5F P
V
DS
Drain-source Voltage (VGS=0) 75 V
V
DGR
Drain- gate Vol t age (RGS=20kΩ)75V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Curre nt (cont i nuous) at Tc=25oC7540A
I
D
Drain Curre nt (cont i nuous) at Tc=100oC5328A
I
DM
(•) Dr ain Curre nt (pulse d) 300 160 A
P
tot
Total Dissipation at Tc=25oC 160 50 W
Derat ing F ac tor 1.06 0.37 W/
o
C
V
ISO
Ins ulat ion W i th s t and Voltage ( DC) 20 00 V
dv/ dt Pea k Diode Recovery voltage slope 7 V/ns
T
stg
Sto rage Temperat ure -65 to 175
o
C
T
j
Max. Operat ing Junct ion Tem pe ra ture 175
o
C
(•) Pulse width limited by safe operating area (1)ISD≤75 A, di/dt ≤ 300 A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
TYPE V
DSS
R
DS(on)
I
D
ST P75NE75
ST P75NE75FP
75 V
75 V
<0.013Ω
<0.013Ω
75 A
40 A
May 1999
TO-220 TO-220FP
1
2
3
1
2
3
1/9
THERMAL DATA
TO-220 TO-220FP
R
thj-case
Ther mal Resistanc e Junct ion-case Ma x 0.94 2.7
o
C/W
R
thj-amb
R
thc-sink
T
l
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperat ur e F or Soldering Purp ose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T
j
max)
75 A
E
AS
Single Pul se Avalanc he Ener gy
(starting T
j
=25oC, ID=IAR,VDD=30V)
200 mJ
ELECTRICAL CHARACTERISTICS
(T
case
=25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. U nit
V
(BR)DSS
Drain-source
Break dow n Vo lt age
ID=250µAVGS=0 75 V
I
DSS
Zero Gate Voltage
Drain Curre nt (V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc= 125oC
1
10
µA
µA
I
GSS
Gat e- bod y Leakag e
Current (V
DS
=0)
V
GS
=± 20 V
±
100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. U nit
V
GS(th)
Gate Threshold Voltage VDS=VGSID= 250µA 234V
R
DS(on)
Sta t ic Drain-s our c e On
Resistance
VGS=10V ID= 37.5 A 0.01 0.01 3
Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
75 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. U nit
g
fs
(∗)Forward
Tr ansc on duc tance
VDS>I
D(on)xRDS(on)maxID
=37. 5 A 40 S
C
iss
C
oss
C
rss
Input Capaci t ance
Out put Capac itance
Reverse Transfer
Capacit a nc e
VDS=25V f=1MHz VGS= 0 5300
850
310
pF
pF
pF
STP75NE75/FP
2/9
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. U nit
t
d(on)
t
r
Tur n-on Delay Time
Rise Time
VDD=40V ID=40A
R
G
=4.7
Ω
VGS=10V
(Resis t iv e Load, see fig. 3 )
32
130
ns
ns
Q
g
Q
gs
Q
gd
Tot al Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD=60V ID=75A VGS= 10 V 150
30
62
200 nC
nC
nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. U nit
t
d(off)
t
f
Tur n-of f Dela y Tim e
Fall T ime
VDD=40V ID=40A
R
G
=4.7 Ω VGS=10V
(Resis t iv e Load, see fig. 3 )
150
45
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise T im e
Fall T ime
Cross-over Tim e
V
clamp
=60V ID=75A
R
G
=4.7 Ω VGS=4.5V
(Indu ct iv e Load, see fig. 5)
35
60
100
ns
ns
ns
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. U nit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
43
170
A
A
V
SD
(∗)ForwardOnVoltage ISD=75A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 75 A di/dt = 100 A /µs
V
DD
=30V Tj=150oC
(see test circuit, fig. 5)
130
0.6
9
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SafeOperating Area for TO-220 SafeOperating Area for TO-220FP
STP75NE75/FP
3/9
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