SGS Thomson Microelectronics STP6NC60FP, STP6NC60 Datasheet
STP6NC60
N - CHANNEL 600V - 1.0 Ω - 6A TO-220/TO-220FP
TYPE V
STP6NC60
STP6NC60FP
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ NEWHIGH VOLTAGE BENCHMARK
■ GATECHARGE MINIMIZED
DS(on)
DSS
600 V
600 V
= 1.0 Ω
DESCRIPTION
The PowerMESHΙΙ is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*areafigure of merit while keeping the device
at the leading edge for what concerns switching
speed,gate chargeand ruggedness.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SWITHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVER
R
DS(on)
<1.2
<1.2 Ω
I
D
Ω
6A
6A
STP6NC60FP
PowerMESHΙΙ MOSFET
3
2
1
TO-220 T0-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST P6NC6 0 ST P6NC 60FP
V
V
V
I
DM
P
dv/dt(
V
T
(•) Pulse width limited by safe operating area (1)ISD≤ 6 A,di/dt ≤100 A/µs,VDD≤ V
(*) Limited only by maximum temperatureallowed
December 1999
Drain-source Volt age (VGS= 0) 600 V
DS
Drain- g at e V olt ag e (RGS=20kΩ) 600 V
DGR
Gate-s ource Voltage ± 30 V
GS
Drain Cur rent (co nt inu ous ) at Tc=25oC 6 6(*) A
I
D
Drain Cur rent (co nt inu ous ) at Tc=100oC 3.8 3.8(* ) A
I
D
(•) Drain Cur rent (puls ed) 24 24 A
Tot al Dissi pat ion at Tc=25oC 125 40 W
tot
Derat ing F ac tor 1.0 0. 32 W/
) P eak Diode Recov e ry voltage sl ope 4 4 V/ns
1
Ins ulat i on Wi t hs t an d V olt ag e (DC)
ISO
Sto rage Temper at ure -65 to 150
stg
Max. Operating Junc t ion Temperat ur e 150
T
j
2000 V
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/9
STP6NC60/STP6NC60FP
THERMAL DATA
T0-220 T0-220FP
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
E
Ther mal Res istance Junct ion-case Max 1.0 3.1
MaxT hermal Re sistance J unction-ambient Max
Ther mal Res istance C as e - sink Ty p
Maximum Lead Tempera t ure For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se A v alan c he E nergy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
6A
320 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 600 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
= ± 30 V ± 100 nA
V
GS
1
50
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain-s our c e On
VGS=10V ID=3A 1.0 1.2 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)ma x
6A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacit anc e
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)ma xID
=3A 6.5 S
VDS=25V f=1MHz VGS= 0 1020
145
21
µA
µA
pF
pF
pF
2/9
STP6NC60/STP6NC60FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise T ime
VDD=300V ID=3A
R
=4.7
G
Ω
VGS=10V
16
14
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Char ge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 480 V ID=6A VGS=10V 35
5.5
17.2
45.5 nC
SWITCHINGOFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Ris e Time
Fall T ime
f
Cross-over Time
c
VDD=480V ID=6A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
13
16
23
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
6
24
(pulsed)
(∗)ForwardOnVoltage ISD=6A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=6A di/dt=100A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
450
2.9
Charge
Reverse Recovery
13
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area SafeOperating Area for TO-220FP
3/9
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