SGS Thomson Microelectronics STP6NB50FP, STP6NB50 Datasheet
STP6NB50
STP6NB50FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
TYPE V
STP6NB50
STP6NB50FP
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
DSS
500 V
500 V
=1.35 Ω
R
DS(on)
<1.5Ω
<1.5Ω
I
D
5.8 A
3.4 A
DESCRIPTION
Using the latest high voltageMESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switchingcharacteristics.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
ST P6 NB50 ST P6NB 50FP
V
V
V
I
DM
P
dv/dt(
V
T
(•) Pulsewidth limitedby safe operating area (1)ISD≤ 6A, di/dt ≤ 200 A/µs, VDD≤ V
March 1998
Drain-source Voltage (VGS=0) 500 V
DS
Drain- gate Voltage (RGS=20kΩ)
DGR
Gat e- source Volt age ± 30 V
GS
Drain Current (con tinuous) at Tc=25oC5.83.4A
I
D
I
Drain Current (con tinuous) at Tc=100oC3.72.1A
D
500 V
(•) Drain Current (puls ed ) 23.2 23.2 A
Tot al Dissipat i on at Tc=25oC10035W
tot
Derat in g Factor 0.8 0.28 W/
1) Pea k Diode Recovery volt age sl ope 4.5 4.5 V/ns
Ins ulation With st and V oltage (DC) -- 2000
ISO
Sto rage Temper ature -65 to 150
stg
Max. Operat ing J unctio n Temper at u r e 150
T
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
o
C
1/9
STP6NB50/FP
THERMAL DATA
TO-220 TO- 220FP
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junctio n-c a s e Max 1.25 3.57
Ther mal Resist ance Junctio n-ambient Max
Ther mal Resist ance Case-sink T yp
Maximum Lead T e mperat ure For Sold eri ng Pur p os e
l
Avalanche Curre nt , Repet it i v e or Not-Repetitive
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
62.5
0.5
300
5.8 A
290 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
500 V
Breakdown Voltage
I
DSS
I
GSS
Zer o Gate Vo lt age
Drain Cur rent (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 30 V
V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 2.9 A 1.35 1.5 Ω
Resistance
I
D(on)
On S tate Drain Cu rr e nt VDS>I
D(on)xRDS(on)max
5.8 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductanc e
C
C
C
Input Capaci tance
iss
Out put C apa citanc e
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=2.9A 2.5 4 S
VDS=25V f=1MHz VGS= 0 680
110
12
884
149
16
µA
µA
pF
pF
pF
2/9
STP6NB50/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
Turn-on Time
r
Rise Time
t
VDD=250V ID=2.9A
=4.7 Ω VGS=10V
R
G
11.5
8
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sour ce Charge
gs
Gate-Drain Charge
gd
VDD=400V ID=5.8A VGS=10V 21
7.2
8
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
t
Of f - voltag e Rise Tim e
Fall Time
f
Cross-ov er Tim e
c
VDD=400V ID=5.8A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
7
5
15
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward On Voltage ISD=5.8A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
= 5.8 A di/dt = 100 A /µs
I
SD
=100V Tj=150oC
V
DD
(see test circuit, figure 5)
435
3.3
Charge
Reverse Recovery
15
Current
16
12
30 nC
12
10
23
5.8
23.2
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Areafor TO-220 Safe Operating Area for TO-220FP
3/9
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