SGS Thomson Microelectronics STP6NA60FP Datasheet
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STP 6NA60F P 600 V < 1.2 Ω 3.9 A
R
DS(on)
I
D
STP6NA60FP
PRELIMINARY DATA
■ TYPICALR
■ ±30VGATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOWINTRINSICCAPACITANCES
■ GATECHARGE MINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
DS(on)
=1Ω
o
C
DESCRIPTION
This series of POWER MOSFETS represents
the most advanced high voltage technology.
The optmized c ell layout coupled with a new
proprietary edge termination concur to give
the device low RDS(on) and ga te charge,
unequalled ruggedness and superior
switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
DGR Drain- g at e Volt age (R
V
I
DM
P
V
T
(•) Pulse width limitedby safe operating area
October 1997
Drain-s ou r ce V olt ag e (VGS=0) 600 V
DS
=20kΩ)
GS
Gate-source Voltage ± 30 V
GS
I
Drain Current (c ontinuous) at Tc=25oC3.9A
D
I
Drain Current (c ontinuous) at Tc=100oC2.6A
D
600 V
(•) Drain Current (pulsed) 26 A
Tot al Dissipa t ion at Tc=25oC40W
tot
Derating Factor 0.32 W/
Insulation Withstand Voltage (DC) 2000 V
ISO
Storage Temperature -65 to 150
stg
T
Max. Ope r ating Junc t io n Tem pe r ature 150
j
o
C
o
C
o
C
1/5
STP6NA60FP
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max V a lue Uni t
I
AR
E
Ther mal Resistanc e J unction- ca s e Max
Ther mal Resistanc e J unction- ambient Max
Ther mal Resistanc e Cas e - sink Ty p
Maximum Lea d Te mperat u re Fo r S oldering Purpos e
l
Avalanche Current , R epetiti ve or Not-Repetit ive
(pulse width limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
3.12
62.5
0.5
300
6.5 A
215 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
600 V
Breakdown Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Cur rent (V
GS
=0)
Gat e-body Leakage
Current (V
DS
=0)
=MaxRating
V
DS
V
=MaxRating Tc=100oC
DS
= ± 30 V
V
GS
25
250
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
2.25 3 3.7 5 V
Voltage
R
DS(on)
St at i c Drain - so ur ce On
VGS=10V ID=2.5A 1 1.2 Ω
Resistance
I
D(on)
On St at e Dra in Curr e nt VDS>I
D(on)xRDS(on)max
6.5 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put C apa c itance
oss
ReverseTr ansfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=3A 3.5 5.6 S
VDS=25V f=1MHz VGS= 0 1150
155
40
1550
210
55
µA
µA
pF
pF
pF
2/5
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