SGS Thomson Microelectronics STP6NA60FI, STP6NA60 Datasheet
STP6NA60
STP6NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
STP 6NA60
STP 6NA60FI
■ TYPICAL R
■ ±30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DS(on)
DSS
600 V
600 V
=1Ω
R
DS(on)
<1.2Ω
<1.2Ω
I
D
6.5 A
3.9 A
o
C
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
and gate charge, unequalled
DS(on)
ruggedness and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
ST P6NA60 ST P6NA60FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS=0) 600 V
DS
Drain - gat e Voltage (RGS=20kΩ)600V
DGR
Gate-source Voltage ± 30 V
GS
Drain Current (continuous) at Tc=25oC6.53.9A
I
D
Drain Current (continuous) at Tc=100oC4.3 2.6A
I
D
(•) Drain Current (pulsed) 26 26 A
Total Di ssipation at Tc=25oC 125 45 W
tot
Derating Factor 1 0.36 W/
Ins ulation Withs t and Voltag e (DC) 2000 V
ISO
St or a ge Tem perature -65 t o 150
stg
Max. Operating Jun c t ion Temperat ure 150
T
j
o
o
o
C
C
C
1/10
STP6NA60/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Res istance Junction-c ase Max 1 2.78
Thermal Resis tance Junction-ambie nt Max
Thermal Res istance Case -s ink Typ
Maximum Lead Temperature For Soldering Purp ose
l
Avalanc h e Cu rr ent , Repet itive or Not-Repetitiv e
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Repetitiv e
(Tc= 100oC, pulse width l imited b y Tjmax, δ <1%)
62.5
0.5
300
6.5 A
215 mJ
9.5 mJ
4.3 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 600 V
Break d own Volta ge
I
DSS
I
GSS
Zer o G at e Voltage
Drain Current (VGS=0)
Gat e- body Leakage
Current (V
DS
=0)
VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC
= ± 30 V ± 100 nA
V
GS
25
250
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
St at ic Drain-s our ce O n
VGS=10V ID=3A 1 1.2 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
6.5 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=3A 3.5 5.6 S
VDS=25V f=1MHz VGS= 0 1150
155
40
1550
210
55
µA
µA
pF
pF
pF
2/10
STP6NA60/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Turn-on Current Slope VDD=480V ID=6A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=300V ID=3A
RG=47 Ω VGS=10V
35
90
(see test circuit, figure 3)
200 A/µs
RG=47 Ω VGS=10V
(see test circuit, figure 5)
VDD= 480 V ID=3A VGS=10V 54
8
23
VDD=480V ID=6A
RG=47 Ω VGS=10V
(see test circuit, figure 5)
80
20
115
50
125
75 nC
110
30
155
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain C urrent
(•)
Source-drain C urrent
6.5
26
(pulsed)
V
(∗) For w ar d On Voltage ISD=6.5A VGS=0 1.6 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=6A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
600
9
Charge
I
RRM
Reverse Recovery
30
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas for TO-220 Safe Operating Areas forISOWATT220
A
A
ns
µC
A
3/10
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