SGS Thomson Microelectronics STP6LNC60FP, STP6LNC60 Datasheet
STP6LNC60
STP6LNC60FP
N-CHANNEL 600V - 1Ω - 5.8A TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE V
STP6LNC60
STP6LNC60FP
■ TYPICAL R
■ EXTREMELY HIGH dv /d t CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DS
DSS
600 V
600 V
(on) = 1.0 Ω
R
DS(on)
< 1.25 Ω
< 1.25 Ω
I
D
5.8 A
5.8 A
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP6LNC60 STP6LNC60FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
V
ISO
T
stg
T
j
(•)Pu l se width limite d by safe operat i ng area
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 23.2 23.2 (*) A
Total Dissipation at TC = 25°C
5.8 5.8 (*) A
3.65 3.65 (*) A
100 35 W
Derating Factor 0.8 0.28 W/°C
Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature
Max. Operating Junction Temperature
(1)ISD ≤5.8A, di/dt ≤100A/µs, VDD ≤ V
–65 to 150 °C
(BR)DSS
, Tj ≤ T
JMAX.
1/9October 2001
STP6LNC60/STP6LNC60FP
THERMA L D ATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.25 3.53 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 600 V
5.8 A
300 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
1µA
50 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 3 A
234V
1.0 1.25 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 120 pF
Reverse Transfer
Capacitance
ID=3A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
6S
830 pF
15.5 pF
2/9
STP6LNC60/STP6LNC60FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 15.5 ns
Total Gate Charge
Gate-Source Charge 4.8 nC
Gate-Drain Charge 17.5 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time 7.5 ns
Cross-over Time 16 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 5.8 A
(2)
Source-drain Current (pulsed) 23.2 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 2.4 µC
Reverse Recovery Current 10.6 A
= 300 V, ID = 3 A
DD
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
V
= 480V, ID = 6 A,
DD
VGS = 10V
V
= 480V, ID = 6 A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 6 A, VGS = 0
I
=6 A, di/dt = 100A/µs
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
14.5 ns
28 39 nC
9ns
1.6 V
450 ns
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
3/9
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