SGS Thomson Microelectronics STP60NS04ZB Datasheet
STP60NS04ZB
N-CHANNEL CLAMPED 10mΩ -60ATO-220
FULLY PROTECTED MESH OVERL AY™ MOSFET
TYPE V
DSS
R
DS(on)
I
D
STP60NS04ZB CLAMPED < 0.015 Ω 60 A
■ TYPICAL R
■ 100% AVALANCHE TESTED
■ LOW CAPACITANCE AND GATE CHARGE
■ 175°C MAXIMUM JUNCTION TEMPERATURE
(on) = 0.010 Ω
DS
DESCRIPTION
This fully clamped MOSFET is produced by using
the latest a dv anc ed Company’s Mesh Overlay process which is based on a nove l strip layout. The inherent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable fo r the harshest operation conditions such as those encountered in the automotive
environment .Any other application requiring extra
ruggedness is also recommended.
APPLICATIONS
■ ABS,SOLENOID DRIVERS
■ MOTOR CONTROL
■ DC-DC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAX IMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DG
V
GS
I
D
I
D
I
DG
I
GS
I
DM
P
TOT
V
ESD(G-S)
V
ESD(G-D)
V
ESD(D-S)
T
stg
T
j
(•)Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
CLAMPED V
Drain-gate Voltage CLAMPED V
Gate- source Voltage CLAMPED V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
60 A
42 A
Drain Gate Current (continuous) ± 50 mA
Gate Source Current (continuous) ± 50 mA
()
Drain Current (pulsed) 240 A
Total Dissipation at TC= 25°C
150 W
Derating Factor 1 W/°C
Gate-Source ESD(HBM-C=100 pF, R=1.5 KΩ) 6kV
Gate-Drain ESD(HBM-C=100 pF, R=1.5 KΩ) 4kV
Drain-Source ESD(HBM-C=100 pF, R=1.5 KΩ) 4kV
Storage Temperature
Max. Operating Junction Temperature
–65to175 °C
1/8November 2002
STP60NS04ZB
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.0 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max, δ < 1%)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=30V)
j
60 A
400 mJ
ELECTRICAL CHARACTERISTICS (T
= 25°C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Clamped Voltage ID=1mA,VGS=0
33 V
-40<Tj<175°C
I
I
V
DSS
GSS
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
Gate-Source
=0)
=16V,Tj=150°C
V
DS
=16V,Tj=175°C
V
DS
= ±10 V,Tj= 175 °C
V
GS
VGS= ±16 V,Tj= 175 °C
50 µA
100 µA
50
150
IGS= ±100 µA 18 V
Breakdown Voltage
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGS,ID=1mA
1.7 3 4.2 V
-40<Tj<150°C
R
DS(on)
Static Drain-source On
Resistance
VGS=10V,ID=30A
VGS=16V,ID=30A
11 15 mΩ
10 14 mΩ
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 30 A 20 40 S
g
fs
V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 800 1000 pF
Reverse Transfer
Capacitance
=25V,f=1MHz,VGS=0
DS
1700 2100 pF
190 240 pF
µA
µA
2/8
STP60NS04ZB
ELECTRICAL CHARACTERISTICS (CO NTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge 13 nC
Gate-Drain Charge 16 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off Voltage Rise Time
Fall Time
Cross-over Time
SOURCE DR AIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safeoperating area.
Source-drain Current 60 A
(2)
Source-drain Current (pulsed) 240 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 62 nC
Reverse Recovery Current 2.6 A
=18V,ID=60A,
DD
V
=10V
GS
V
=30V,ID=60A,
CLAMP
RG=4.7Ω, VGS=10V
(see test circuit, Figure 3)
ISD=60A,VGS=0
I
= 60 A, di/dt = 100 A/µs
SD
VDD=15V,Tj= 150°C
(see test circuit, Figure 5)
48 62 nC
60
45
100
75
60
130
1.5 V
50 ns
ns
ns
ns
Thermal ImpedanceSafe Operating Area
3/8
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