SGS Thomson Microelectronics STP60NE10FP, STP60NE10 Datasheet

STP60NE10



STP60NE10FP

N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP

STripFET POWER MOSFET

TYPE V

ST P60NE10 ST P60NE10FP

■ TYPICALR

■ EXCEPTIONALdv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ APPLICATIONORIENTED

DS(on)

DSS

100 V 100 V

= 0.016 Ω

CHARACTERIZATION

DESCRIPTION

This PowerMOSFET is the latest developmentof STMicroelectronics unique ”Single Feature Size” strip-based process.The resulting transi- stor showsextremelyhigh packing densityfor low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkablemanufacturingreproducibility.

APPLICATIONS

■ SOLENOIDAND RELAYDRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DCCONVERTERS

■ AUTOMOTIVEENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

R

DS(on)

<0.022Ω <0.022Ω

I

D

60 A 30 A

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P60NE10 ST P60NE10FP

V

I

DM

P

V

dv/ dt Peak Diode Recovery v olt a ge slope 7 V/ns

T

(•) Pulsewidth limited by safeoperating area (1)ISD≤ 60 A, di/dt ≤ 300 A/µs, VDD≤ V

May 1999

Drain-source Voltage (VGS= 0) 100 V

DS

Drain- gate Voltage (RGS=20kΩ) 100 V

DGR

Gate-source Voltage ± 20 V

GS

I

Drain Curre nt (cont inuous) at Tc=25oC6030A

D

Drain Curre nt (cont inuous) at Tc=100oC4221A

I

D

(•) Dr ain Curre nt (pulse d) 240 120 A

Total Dissipation at Tc=25oC 160 50 W

tot

Derat ing F ac tor 1.06 0.37 W/ Ins ulat ion W ithstand Voltage (DC)  20 00 V

ISO

Sto rage Temperat ure -65 t o 175

stg

T

Max. Oper ating Junction Tempe rat ure 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/9

STP60NE10/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max V alue Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max 0.94 2.7 Ther mal Resistanc e Junct ion-ambient Max

Ther mal Resistanc e Case-sink Ty p Maximum L ead Temperature F or Solder ing Purpose

l

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

Single Pul se Avalanche E nergy

AS

(starting T

=25oC, ID=IAR,VDD=35V)

j

max)

j

62.5

0.5

300

60 A

100 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS= 0 100 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage Drain Curre nt (V

GS

Gat e- bod y Leakage Current (V

DS

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250µA 234V Sta t ic Drain-s ource O n

VGS=10V ID= 30 A 0.016 0.022

Resistance

I

D(on)

On StateDrain Current VDS>I

D(on)xRDS(on )max

60 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

Input Capaci t ance

iss

Out put Capac it ance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=18 A 30 S

VDS=25V f=1MHz VGS= 0 5300

640 215

µA µA

Ω

pF pF pF

2/9

STP60NE10/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Tur n-on Delay Time Rise Time

r

VDD=50V ID=30A R

=4.7

G

Ω

VGS=10V

28

100

(Resis t iv e Load, s ee f ig. 3 )

Q Q Q

Tot al Gate Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=80V ID=60A VGS= 10 V 142

27 59

185 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y T ime

t

Fall T ime

f

VDD=50V ID=30A

=4.7 Ω VGS=10V

R

G

160

45

(Resis t iv e Load, s ee f ig. 3 )

t

r(Voff)

t

Off-volt age Rise Time Fall T ime

f

Cross-over Tim e

c

V

=80V ID=60A

clamp

=4.7 Ω VGS=10V

R

G

(Indu ctive Load , see fig . 5)

40 45 85

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Sou rc e-d rai n Cu rre nt

(•)

Sou rc e-d rai n Cu rre nt

60

240

(pulsed)

(∗)ForwardOnVoltage ISD=60A VGS=0 1.5 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 60 A di /dt = 100 A/µs

=50V Tj=150oC

V

DD

(s ee t est c ircu it , f ig. 5)

170

1.02 Charge Reverse Recovery

12

Current

ns ns

nC nC

ns ns

ns ns ns

A A

ns

µC

A

Safe Operating Areafor TO-220 Safe Operating Areafor TO-220FP

3/9