SGS Thomson Microelectronics STP60NE06L-16FP, STP60NE06L-16 Datasheet

STP60NE06L-16



N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP

TYPE V

ST P60NE06L-16 ST P60NE06L-16F P

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ LOW GATE CHARGE

■ HIGHCURRENT CAPABILITY

■ 175

■ LOW THRESHOLDDRIVE

o

DS(on)

C OPERATINGTEMPERATURE

DSS

60 V 60 V

= 0.014 Ω

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronisunique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristicsand less critical alignment steps therefore a remarkable manufacturingreproducibility.

R

DS(on)

<0.016Ω <0.016Ω

I

D

60 A 35 A

STP60NE06L-16FP

STripFET POWER MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ DC-DC& DC-ACCONVERTERS

■ AUTOMOTIVEENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP 60NE06L- 16 STP 60NE 0 6L - 16 F P

V

I

DM

P

V

dv/ dt Peak Diode Recovery voltage slope 6 V/ ns

T

(•) Pulsewidth limited by safeoperating area (1)ISD≤ 60 A, di/dt ≤ 300 A/µs, VDD≤ V

May 2000

Drain-source Voltage (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)60V

DGR

Gate-source Voltage ± 15 V

GS

I

Drain Curre nt (cont i nuous) at Tc=25oC60 35A

D

Drain Curre nt (cont i nuous) at Tc=100oC42 24A

I

D

(•) Drain Curre nt (pulse d) 240 140 A

Total Dissipation at Tc=25oC15045W

tot

Derat ing F ac tor 1 0.3 W/ Ins ulat ion W i th s t and Voltage (DC)  2 000 V

ISO

Sto rage Temperat ure -65 to 175

stg

T

Max. Operat ing Junction Tempera t ure 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

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STP60NE06L-16/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max V alue Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max 0.94 2.7 Ther mal Resistanc e Junct ion-ambient Max

Ther mal Resistanc e Case-sink Ty p Maximum L ead Temperature F or Solder ing P urp os e

l

Avalanche Current, R epetitive or Not-Repetitive (pulse width limited by T

Single Pul se Avalanche Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max)

j

62.5

0.5

300

60 A

400 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 60 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage Drain Curre nt (V

GS

Gat e- bod y Leakag e Current (V

DS

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

=± 15 V

GS

1

10

100 nA

±

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Volt age VDS=VGSID= 250µA11.62.5V Sta t ic Drain-s our c e On

Resistance

VGS=5V ID=30A

=10V ID=30A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

0.014

0.012

60 A

0.016

0.014ΩΩ

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=30 A 30 S

VDS=25V f=1MHz VGS= 0 4150

590 150

µA µA

pF pF pF

2/9

STP60NE06L-16/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Tur n-on Delay Time Rise Time

r

VDD=30V ID=30A R

=4.7

G

Ω

VGS=5V

50

155

(Resis t iv e Load, see fig. 3)

Q Q Q

Tot al Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=40V ID=60A VGS=5V 55

15 30

70 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y Tim e

t

Fall T ime

f

VDD=30V ID=30A R

G

=4.7

Ω

VGS=5V

125

25

(Resis t iv e Load, see fig. 3)

t

r(Voff)

t

Off-volt age Rise Time Fall T ime

f

Cross-over Tim e

c

VDD=48V ID=20A R

=4.7

G

Ω

VGS=5V

(Indu ct iv e Load, see fig . 5)

45 220 280

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5% (•) Pulse width limited by safeoperating area

Source-drain Current

(•)

Source-drain Current

60

240

(pulsed)

(∗)ForwardOnVoltage ISD=60A VGS=0 1.5 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 60 A di/dt = 100 A/µs

=30V TJ=150oC

V

DD

(see test circuit, fig. 5)

85 300

Charge Reverse Recovery

7

Current

ns ns

nC nC

ns ns

ns ns ns

A A

ns

µ

A

C

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9