STP60NE03L-10
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
■ TYPICALR
DS(on)
=0.007 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE 100
o
C
■ APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremelyhigh packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG,LAMPDRIVERS,Etc. )
INTERNAL SCHEMATIC DIAGRAM
December 1997
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
DS
Drain-source Voltage (VGS=0) 30 V
V
DGR
Drain- gate Voltage ( RGS=20kΩ)
30 V
V
GS
Gat e- source Volt age ± 15 V
I
D
Drain Current (c on t in uous) at Tc=25oC60A
I
D
Drain Current (c on t in uous) at Tc=100oC42A
I
DM
(•) Drain Current (pulsed) 240 A
P
tot
Tot al Dissip at i on at Tc=25oC120W
Derating Factor 0.8 W/
o
C
dv/ dt Peak Diode Recov ery vo lt age sl ope 7 V/ns
T
stg
Sto rage T emperat ure -65 to 175
o
C
T
j
Max. Oper at in g Junc t io n Temperatur e 175
o
C
(•) Pulsewidth limitedby safe operating area (1)ISD≤ 60 A,di/dt ≤ 300 A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
TYPE V
DSS
R
DS(on)
I
D
STP60NE03L-10 30 V < 0.010 Ω 60 A
1
2
3
TO-220
1/8