SGS Thomson Microelectronics STP60N06-14, STP60N05-14 Datasheet
STP60N05-14
STP60N06-14
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
■ TYPICAL R
DS(on)
= 0.012 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
o
C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175
o
C OPERATING TEMP E RAT UR E
■ VERY LOW R
DS (on)
■ APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SOLENOID AND RELAY DRIVER S
■ REGULAT O RS
■ DC-DC & DC-AC CONVERT E RS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STP60N05-14
STP60N06-14
50 V
60 V
< 0.014 Ω
< 0.014 Ω
60 A
60 A
March 1996
1
2
3
TO-220
ABSOLUT E MAXIMUM RATI NG S
Symbol Parameter Value Unit
STP60N05-14 STP60N06-14
V
DS
Drain-Source Voltage (Vgs = 0) 50
60
V
V
DGR
Drain-Gate Voltage (Rgs = 20 KΩ)50
60
V
V
GS
Gate-Source Voltage ± 20 V
I
D
Drain-Current (continuous) at Tc = 25oC60A
I
D
Drain-Current (continuous) at Tc = 100oC50A
I
DM
(•) Drain-Current (Pulsed) 240 A
P
tot
Total Dissipation at Tc = 25oC 150 W/oC
Derating Factor 1
o
C
V
ISO
Insulation Withstand Voltage (DC) - V
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max Operating Junction Temperature 175
o
C
(•)Pulse width limited by safe operating area
1/5
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max, δ < 1%)
60 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 oC, ID = IAR, V
DD
= 25 V)
600 mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max, δ < 1%)
150 mJ
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100 oC, pulse width limited by Tj max, δ < 1%)
50 A
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA V
GS
= 0 60 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 Tc = 125 oC
250
1000µAµA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20 V 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage V
DS
= VGS ID = 250 µA 234V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10 V ID = 30 A
V
GS
= 10 V ID = 30 A Tc = 100oC
0.012 0.014
0.028ΩΩ
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max
V
GS
= 10 V
60 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
VDS > I
D(on)
x R
DS(on)max
ID = 30 A 20 30 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0 3900
950
250
4800
1200
320
pF
pF
pF
STP60N05-14/STP60N06-14
2/5
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