SGS Thomson Microelectronics STP5NK80Z, STP5NK80ZFP Datasheet
STP5NK80Z - STP5NK80ZFP
N-CHANNEL 800V - 1.9Ω - 4.3A TO-220/TO-220FP
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP5NK80Z
STP5NK80ZFP
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPAC ITANCES
■ VERY GOOD MANUFACTURING
800 V
800 V
(on) = 1.9 Ω
DS
DSS
R
DS(on)
< 2.4 Ω
< 2.4 Ω
I
D
4.3 A
4.3 A
Pw
110 W
30 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST ’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series c om pl ements ST full range of high voltage MOSFE Ts including revolutionary MDmesh™ products.
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LIN E POWER SUPPL I ES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP5NK80Z P5NK80Z TO-220 TUBE
STP5NK80ZFP P5NK80ZFP TO-220FP TUBE
1/10July 2002
STP5NK80Z - STP5NK80ZFP
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP5NK80Z STP5NK80ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
(l) Pulse wi dth limited by safe operating area
≤4.3A, di/dt ≤200A/µs, VDD ≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
800 V
800 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
(l)
Drain Current (pulsed) 17.2 17.2 (*) A
Total Dissipation at TC = 25°C
4.3 4.3 (*) A
2.7 2.7 (*) A
110 30 W
Derating Factor 0.88 0.24 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3500 V
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
, Tj ≤ T
(BR)DSS
JMAX.
-55 to 150
-55 to 150
°C
°C
THERMA L D ATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
4.3 A
190 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/10
STP5NK80Z - STP5NK80ZFP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
I
V
R
DSS
GSS
GS(th)
DS(on)
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS = 15 V, ID= 2.15 A 4.25 S
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID = 1 mA, VGS = 0 800 V
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ± 30V ±10 µA
GS
V
= VGS, ID = 100µA
DS
3 3.75 4.5 V
1
50
VGS = 10V, ID = 2.15 A 1.9 2.4 Ω
= 25V, f = 1 MHz, VGS = 0 910
V
DS
98
20
VGS = 0V, VDS = 0V to 400V 40 pF
VDD = 400 V, ID = 2 A
RG= 4.7Ω VGS = 10 V
18
25
(Resistive Load see, Figure 3)
= 640V, ID = 4.3 A,
V
DD
VGS = 10V
32.4
5
45.5 nC
18.5
µA
µA
pF
pF
pF
ns
ns
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD = 400 V, ID = 2 A
RG=4.7Ω VGS = 10 V
45
30
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
= 640V, ID = 4.3 A,
V
DD
RG=4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
22
10
32
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
.
DSS
ISD = 4.3 A, VGS = 0
I
SD
V
(see test circuit, Figure 5)
= 4.3 A, di/dt = 100A/µs
= 40V, Tj = 150°C
DD
500
3
12
when VDS increase s fr om 0 to 80%
oss
4.3
17.2
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/10
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