SGS Thomson Microelectronics STP5NB100FP Datasheet

STP5NB100



N - CHANNEL1000V - 2.4Ω - 5A - TO-220/TO-220FP

TYPE V

ST P5NB100 ST P5NB100FP

ν TYPICALR ν EXTREMELY HIGH dv/dt CAPABILITY ν 100% AVALANCHETESTED ν VERY LOW INTRINSIC CAPACITANCES ν GATECHARGE MINIMIZED

DS(on)

DSS

1000 V 1000 V

=2.4 Ω

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switchingcharacteristics.

R

DS(on)

<2.7Ω <2.7Ω

I

D

5A 5A

STP5NB100FP

PowerMESH MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

2

1

3

APPLICATIONS

ν HIGHCURRENT,HIGH SPEED SWITCHING ν SWITCH MODE POWER SUPPLIES(SMPS) ν DC-AC CONVERTERSFOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP5NB100 STP5NB100FP

V

I

DM

P

dv/ dt(

V

T

(•) Pulse width limited by safe operating area (1)ISD≤ 5 A, di/dt ≤ 200 A/µs, VDD≤ V (*) Limited only by maximum temperature allowed

February 2000

Drain-source Voltage (VGS=0) 1000 V

DS

Drain- gate Voltage (RGS=20kΩ)

DGR

Gat e-source Voltage ± 30 V

GS

Drain Curren t (cont inu ous) at Tc=25oC 5 5(*) A

I

D

Drain Curren t (cont inu ous) at Tc=100oC 3.1 3.1( *) A

I

D

1000 V

(•) Drain Current (pulsed) 15.2 15.2 A

Tota l Dissipation at Tc=25oC 135 40 W

tot

Derating F actor 1.08 0.32 W/

1) Peak Diode Recov er y vo lt a ge slope 4.5 4.5 V/ ns

Ins u lation Withstand Voltage ( DC)  2000 V

ISO

St orage Temperat ure -65 to 150

stg

Ma x. Operating J unctio n T emperat ure 150

T

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

1/9

STP5NB100/STP5NB100FP

THERMAL DATA

TO-220 TO -220F P

R

thj-cas e

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symb ol Para meter Max Valu e Uni t

I

AR

E

Ther mal Res i s t a nce Jun ct ion-cas e Max 0.93 3.12 Ther mal Res i s t a nce Jun ct ion-ambient Max

Ther mal Res i s t a nce Ca se-s i nk Ty p Maxim um Lead Temperatur e Fo r Soldering Pur pose

l

Avalanche Cu r rent, Repetitive or Not-Repetitive (pulse w idth limite d b y T

Single P u ls e Ava lan c he Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

5A

220 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Cond itions Min. Typ. M ax. Unit

V

(BR) DSS

Drain-source

=250µAVGS=0

I

D

1000 V

Break d own Vo lt a ge

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gat e- b ody Leak age Current (V

DS

=0)

V

= Max Rating

DS

= Max Rating Tc=125oC

V

DS

= ± 30 V

V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Cond itions Min. Typ. M ax. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

=250µA

345V

Voltage

R

DS(on)

Static D rain-source On

VGS=10V ID= 2.5 A 2.4 2.7 Ω

Resistance

I

D(on)

On State Dr ain Current VDS>I

D(on)xRDS(on)max

5A

VGS=10V

DYNAMIC

Symbol Parameter Test Cond itions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tra nsconduct a nc e

C

Input Capacitance

iss

Out put Capacitanc e

oss

Reverse Trans fer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

= 2.5 A 1.5 S

VDS=25V f=1MHz VGS= 0 1500

150

17

µA µA

pF pF pF

2/9

STP5NB100/STP5NB100FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Cond itions Min. Typ. M ax. Unit

t

d(on)

t

r

Turn-on Time Rise Time

VDD=500V ID=2.5A

=4.7 Ω VGS=10V

R

G

(see test c irc ui t, figure 3)

Q Q Q

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

VDD=800V ID=5A VGS=10V 39

SWITCHING OFF

Symbol Parameter Test Cond itions Min. Typ. M ax. Unit

t

r(Voff)

t

Off-voltage Rise Time Fall Time

t

f

Cross-over T ime

c

VDD=800V ID=5A

=4.7 Ω VGS=10V

R

G

(see test c irc ui t, figure 5)

SOURCEDRAIN DIODE

Symbol Parameter Test Cond itions Min. Typ. M ax. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operatingarea

Source-drain Current

(•)

Source-drain Current (pulsed)

(∗) Forwar d O n Vol t ag e ISD=5A VGS=0 1.6 V

Reverse Rec overy

rr

Time Reverse Rec overy

rr

= 5 A di/dt = 100 A/µ s

I

SD

=100V Tj=150oC

V

DD

(see test c irc ui t, figure 5) Charge Reverse Rec overy Current

24 11

51 nC

9.6

19.2

20 22 26

5

20

780

5.5

14

ns ns

nC nC

ns ns ns

A A

ns

µC

A

Safe OperatingArea for TO-220 Safe Operating Area for TO-220FP

3/9