SGS Thomson Microelectronics STP5N30LFI, STP5N30L Datasheet
STP5N30L
STP5N30LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
STP 5N30L
STP 5N30LFI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ APPLICATION ORIENTED
DS(on)
DSS
300 V
300 V
= 1.25 Ω
R
DS(on)
I
D
<1.4Ω
<1.4Ω5A3.5 A
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
ST P5N30L STP5 N30LFI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS=0) 300 V
DS
Drain- gate Voltage (RGS=20kΩ)300V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC53.5A
I
D
Drain Current (continuous) at Tc=100oC3.2 2.2A
I
D
(•) Drain Current (pulsed) 20 20 A
Total Di ssipation at Tc=25oC7535W
tot
Derat ing Factor 0.6 0.28 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
o
o
C
C
C
1/10
STP5N30L/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e M ax 1.67 3.57
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
62.5
0.5
300
5A
50 mJ
1.5 mJ
3.2 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 300 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
Current (V
DS
=0)
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
= ± 20 V ± 100 nA
V
GS
10
100
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
St at ic Drain-s our ce O n
VGS=5V ID= 2.5 A 1.25 1.4 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
5A
VGS=10V
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=2.5A 2 5 S
VDS=25V f=1MHz VGS=0 580
75
14
780
110
25
µA
µA
pF
pF
pF
2/10
STP5N30L/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Turn-on C urrent S lope VDD=240V ID=5A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=150V ID=2.5A
RG=50 Ω VGS=5V
70
16590215
(see test circuit, figure 3)
115 A/µs
RG=50 Ω VGS=5V
(see test circuit, figure 5)
VDD= 240 V ID=5A VGS=5V 16
5
7
VDD=240V ID=5A
RG=50 Ω VGS=5V
(see test circuit, figure 5)
60
50
120
22 nC
80
65
160
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
5
20
(pulsed)
V
(∗) Forward On Volt age ISD=5A VGS=0 1.6 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=5A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
360
2.4
Charge
I
RRM
Reverse Recovery
13
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
A
A
ns
µC
A
3/10
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