SGS Thomson Microelectronics STP55NE06L Datasheet
STP55NE06L
STP55NE06LFP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE V
STP 55NE06L
STP 55NE06LFP
■ TYPICALR
■ EXCEPTIONALdV/dtCAPABILTY
■ 100%AVALANCHE TESTED
■ LOW GATECHARGE100
■ HIGHdV/dt CAPABILITY
■ APPLICATIONORIENTED
DS(on)
DSS
60 V
60 V
= 0.018Ω
R
DS(on)
<0.022Ω
<0.022Ω
o
C
I
D
55 A
28 A
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implantedon a
strip layout structure. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ DC MOTORCONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
3
2
1
TO-220 TO220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST P55NE06L ST P55NE06LFP
V
V
V
I
DM
P
V
dV/ dt Peak Diod e Rec overy vo lt a ge slope 7 V /ns
T
(•) Pulse width limitedby safe operating area (1)ISD≤ 55 A,di/dt ≤ 300 A/µs,VDD≤ V
December 1997
Drain-source Voltage (VGS=0) 60 V
DS
Drain- gate Voltage (RGS=20kΩ)
DGR
Gate-source Volt age ± 15 V
GS
I
Drain Current (continuous) at Tc=25oC5528A
D
I
Drain Current (continuous) at Tc=100oC3920A
D
60 V
(•) Drain Cur rent (pul sed ) 220 220 A
Total Dissipation at Tc=25oC 130 35 W
tot
Derat ing Fa c t or 0.86 0.23 W/
Insulation Withstand Voltage (DC) 2000 V
ISO
Sto rage Tem perat ure -65 to 175
stg
T
Max. O per ating Junc tion Tem pe r at ure 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/6
STP55NE06LFP
THERMAL DATA
TO - 2 20 TO - 220FP
R
thj-case
R
thj- amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Val ue Uni t
I
AR
E
Ther mal Resistance Junctio n- case Max 1.15 4.28
Ther mal Resistance Junctio n- ambient Max
Ther mal Resistance Case-si nk Ty p
Maximum Lead Tem perature For Soldering Purpos e
l
Avalanche Curre nt , Rep et it i v e or Not-Repe t it ive
(pulse width lim it ed by T
Singl e Pulse Avalanc he E nergy
AS
(starti ng T
=25oC, ID=IAR,VDD=25V)
j
max, δ <1%)
j
62.5
0.5
300
55 A
250 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ . Max. Unit
V
(BR)DSS
Drain-source
= 250 µAVGS=0
I
D
60 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gat e Voltage
Drain Current (V
GS
Gat e- bod y Le ak a ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
= Max Rating Tc=125
DS
o
C
= ± 15 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ . Max. Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thr e s hold Voltage
St at i c Drain -s ource O n
Resistance
V
DS=VGSID
VGS=5V ID=27.5A
=10V ID=27.5A
V
GS
On State Drain Current VDS>I
=250µA
D(on)xRDS(on)max
11.72.5V
0.022
0.019
0.028
0.022
55 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ . Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capacitan c e
iss
Out put Capacit ance
oss
Reverse Tr ansfer
rss
Capaci ta nc e
VDS>I
D(on)xRDS(on)maxID
=27.5 A 20 30 S
VDS=25V f=1MHz VGS= 0 2800
375
100
3750
500
140
µA
µA
Ω
pF
pF
pF
2/6
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