SGS Thomson Microelectronics STP50NE10 Datasheet
STP50NE10
N - CHANNEL 100V - 0.021Ω - 50A TO-220
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST P50NE10 100 V <0 . 027 Ω 50 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE AT100
■ APPLICATIONORIENTED
DS(on)
= 0.021 Ω
o
C
CHARACTERIZATION
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ DC-DC& DC-ACCONVERTERS
■ AUTOMOTIVEENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt (
T
(•) Pulsewidth limited by safeoperating area (1)ISD≤ 50 A, di/dt ≤ 300 A/µs, VDD≤ V
April 1999
Dra in- sour c e Vol t age (VGS= 0) 100 V
DS
Dra in- gate Voltage (RGS=20kΩ) 100 V
DGR
Gat e-source Voltage ± 20 V
GS
I
Dra in Current ( continuous) at Tc=25oC50A
D
I
Dra in Current ( continuous) at Tc=100oC35A
D
(•) D rain Cu rr ent ( p uls ed ) 200 A
Tot al Dissipation at Tc=25oC 150 W
tot
Derating Factor 1 W/
1) Peak Diode Re c overy v olt age slope 6 V/ ns
St orage Tem pe r at ure -65 to 175
stg
T
Max. Operat ing Junct ion Temperature 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STP50NE10
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Un it
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead Tempera tur e For Solder ing Purp ose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse A valanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
1
62.5
0.5
300
50 A
300 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Volt age VDS=VGSID= 250 µ A 234V
Sta t ic Drain-sour ce On
VGS=10V ID= 25 A 0.021 0.027
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
50 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=25 A 20 35 S
VDS=25V f=1MHz VGS= 0 4350
500
175
6000
675
238
µ
µA
Ω
pF
pF
pF
A
2/8
STP50NE10
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=50V ID=25A
R
G
=4.7
Ω
VGS=10V
25
10034135
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charg e
gd
VDD=80V ID=50A VGS= 10 V 123
24
47
166 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-volt age Rise Tim e
Fall T ime
f
Cross-over Time
c
VDD=80V ID=50A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
45
35
65
61
48
88
SOURCEDRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
50
200
(pulsed)
(∗)ForwardOnVoltage ISD=50A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 50 A di/dt = 100 A /µs
=30V Tj= 150oC
V
DD
(see test circuit, figure 5)
155
815
210
1100
Charge
Reverse Recovery
10.5
15
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/8
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