SGS Thomson Microelectronics STP50N06FI, STP50N06 Datasheet
STP50N06
STP50N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 0.022 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175
o
C OPERATING TEMPERATURE
■ APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TO-220 ISOWATT220
July 1993
TYPE V
DSS
R
DS(on)
I
D
STP 50N06
STP 50N06FI
60 V
60 V
< 0. 028 Ω
< 0. 028 Ω
50 A
27 A
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Unit
STP 50N06 STP5 0N06FI
V
DS
Drain - source Voltage (VGS=0) 60 V
V
DGR
Drain- gate Voltage (RGS=20kΩ)60V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at Tc=25oC5027A
I
D
Drain Current (continuous) at Tc=100oC35 19A
I
DM
(•) Drain Current (pulsed) 200 200 A
P
tot
Total D i ssipation at Tc=25oC 150 45 W
Derating Factor 1 0.3 W/
o
C
V
ISO
Ins ulation Withs t and Voltage (DC) 20 00 V
T
stg
St orage Temperature -65 to 175
o
C
T
j
Max. Operating Junctio n Temperatur e 175
o
C
(•) Pulsewidth limited by safe operating area
1
2
3
1
2
3
1/10
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
Thermal Resistance Junction -c as e M ax 1 3.33
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpos e
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R epetitiv e
(pulse width limited by Tjmax, δ <1%)
50 A
E
AS
Single Pul se Avalanche Ener gy
(starti ng T
j
=25oC, ID=IAR,VDD=25V)
400 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
100 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R epetitiv e
(Tc= 100oC, pulse wid th limited by Tjmax, δ <1%)
35 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - source
Break d own Voltage
ID=250µAVGS=0 60 V
I
DSS
Zer o Gate Voltage
Drain Current (VGS=0)
VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC
250
1000µAµA
I
GSS
Gat e- body Leakage
Current (V
DS
=0)
V
GS
= ± 20 V ± 100 nA
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA22.94V
R
DS(on)
St at ic Drain-s ourc e O n
Resistance
VGS=10V ID=25A
VGS=10V ID=25A Tc= 100oC
0.022 0.028
0.056ΩΩ
I
D(on)
On St ate Dra in Current VDS>I
D(on)xRDS(on)max
VGS=10V
50 A
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconduct anc e
VDS>I
D(on)xRDS(on)maxID
=25A 17 22 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capaci tance
VDS=25V f=1MHz VGS= 0 1700
630
200
2200
850
260
pF
pF
pF
STP50N06/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=25V ID=25A
RG=4.7 Ω VGS=10V
(see test circuit, figure 3)
50
11070160
ns
ns
(di/dt)
on
Turn-on C urrent Slope VDD=40V ID=50A
RG=4.7 Ω VGS=10V
(see test circuit, figure 5)
460 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD=40V ID=50A VGS=10V 50
14
25
70 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off -voltage R ise Time
Fall Time
Cross-over Time
VDD=40V ID=50A
RG=4.7 Ω VGS=10V
(see test circuit, figure 5)
55
50
110
80
70
160
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
50
200
A
A
V
SD
(∗) Forward On Voltage ISD=50A VGS=0 2 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 50 A di/dt = 100 A/µs
VDD=30V Tj=150oC
(see test circuit, figure 5)
150
0.45
6
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
STP50N06/FI
3/10
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